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Cypress Semiconductor Electronic Components Datasheet

CY7C166 Datasheet

16K x 4 Static RAM

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66
CY7C164
CY7C166
Features
High speed
— 15 ns
Output enable (OE) feature (CY7C166)
CMOS for optimum speed/power
Low active power
633 mW
Low standby power
110 mW
TTL-compatible inputs and outputs
Automatic power-down when deselected
Functional Description
The CY7C164 and CY7C166 are high-performance CMOS
static RAMs organized as 16,384 by 4 bits. Easy memory ex-
pansion is provided by an active LOW Chip Enable (CE) and
16K x 4 Static RAM
three-state drivers. The CY7C166 has an active LOW Output
Enable (OE) feature. Both devices have an automatic power-
down feature, reducing the power consumption by 65% when
deselected.
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW (and the
Output Enable (OE) is LOW for the CY7C166). Data on the
four input/output pins (I/O0 through I/O3) is written into the
memory location specified on the address pins (A0 through
A13).
Reading the device is accomplished by taking Chip Enable
(CE) LOW (and OE LOW for CY7C166), while Write Enable
(WE) remains HIGH. Under these conditions the contents of
the memory location specified on the address pins will appear
on the four data I/O pins.
The I/O pins stay in a high-impedance state when Chip Enable
(CE) is HIGH (or Output Enable (OE) is HIGH for CY7C166).
A die coat is used to insure alpha immunity.
Logic Block Diagram
INPUT BUFFER
A1
A2
AA34 256 x 64 x 4
AA56 ARRAY
A7
A8
COLUMN
DECODER
POWER
DOWN
]
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Pin Configurations
DIP
Top View
SOJ
Top View
I/O3
I/O2
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE
GND
1 22
2 21
3 20
4 19
5 18
6 7C164 17
7 16
8 15
9 14
10 13
11 12
VCC
A4
A3
A2
A1
A0
I/O3
I/O2
I/O1
I/O0
WE
C1643
DIP/SOJ
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE
NC
GND
1 24
2 23
3 22
4 21
5 20
6 7C164 19
7 18
8 17
9 16
10 15
11 14
12 13
VCC
A4
A3
A2
A1
A0
NC
I/O3
I/O2
I/O1
I/O0
WE
C1642
I/O1
I/O0
CE
WE
(OE)
(7C166 ONLY)
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE
OE
GND
1 24
2 23
3 22
4 21
5 20
6 7C166 19
7 18
8 17
9 16
10 15
11 14
12 13
VCC
A4
A3
A2
A1
A0
NC
I/O3
I/O2
I/O1
I/O0
WE
C1644
C1661
7C164-15
7C166-15
15
115
20
7C164-20
7C166-20
20
115
20
7C164-25
7C166-25
25
105
20
7C164-35
7C166-35
35
105
20
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05025 Rev. **
Revised August 24, 2001


Cypress Semiconductor Electronic Components Datasheet

CY7C166 Datasheet

16K x 4 Static RAM

No Preview Available !

CY7C164
CY7C166
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. 65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ............................................ 0.5V to +7.0V
DC Input Voltage[1] ........................................ 0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
VCC
5V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
VOH Output HIGH
Voltage
VOL Output LOW
Voltage
VIH Input HIGH Voltage
VIL
Input LOW
Voltage[1]
IIX Input Load Current
IOZ Output Leakage
Current
IOS
Output Short
Circuit Current[2]
ICC VCC Operating
Supply Current
ISB1
Automatic CE
Power-Down Current[3]
ISB2
Automatic CE
Power-Down Current[3]
Test Conditions
VCC = Min.,
IOH = 4.0 mA
VCC = Min.,
IOL = 8.0 mA
GND < VI < VCC
GND < VO < VCC,
Output Disabled
VCC = Max.,
VOUT = GND
VCC = Max.,
IOUT = 0 mA
Max. VCC, CE > VIH,
Min. Duty Cycle = 100%
Max. VCC,
CE > VCC 0.3V,
VIN > VCC 0.3V
or VIN < 0.3V
7C164-15
7C166-15
Min. Max.
2.4
7C164-20
7C166-20
Min. Max.
2.4
7C164-25, 35
7C166-25, 35
Min. Max.
2.4
Unit
V
0.4 0.4
0.4 V
2.2 VCC 2.2 VCC
0.5 0.8 0.5 0.8
2.2
0.5
VCC
0.8
V
V
5 +5 5 +5 5
5 +5 5 +5 5
+5 µA
+5 µA
350
350
350 mA
115 115
105 mA
40 40
20 mA
20 20
20 mA
Capacitance[4]
Parameter
Description
Test Conditions
Max.
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
10
10
Notes:
1. Minimum voltage is equal to 3.0V for pulse durations less than 30 ns.
2. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
4. Tested initially and after any design or process changes that may affect these parameters.
Unit
pF
pF
Document #: 38-05025 Rev. **
Page 2 of 9


Part Number CY7C166
Description 16K x 4 Static RAM
Maker Cypress Semiconductor
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CY7C166 Datasheet PDF






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