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CY7C1614KV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1614KV18 datasheet preview

CY7C1614KV18 Details

Part number CY7C1614KV18
Datasheet CY7C1614KV18 CY7C1625KV18 Datasheet (PDF)
File Size 593.44 KB
Manufacturer Cypress (now Infineon)
Description 144-Mbit QDR II SRAM Two-Word Burst Architecture
CY7C1614KV18 page 2 CY7C1614KV18 page 3

CY7C1614KV18 Overview

CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst.

CY7C1614KV18 Key Features

  • Separate independent read and write data ports
  • Supports concurrent transactions
  • 360-MHz clock for high bandwidth
  • Two-word burst on all accesses
  • Double data rate (DDR) interfaces on both read and write ports
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Two input clocks for output data (C and C) to minimize clock
  • Echo clocks (CQ and CQ) simplify data capture in high-speed
  • Single multiplexed address input bus latches address inputs

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