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CY7C1526KV18 Datasheet 72-Mbit QDR-II SRAM Four-Word Burst Architecture

Manufacturer: Cypress (now Infineon)

Download the CY7C1526KV18 datasheet PDF. This datasheet also includes the CY7C1511KV18 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CY7C1511KV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The CY7C1526KV18, CY7C1513KV18, and CY7C1515KV18 are 1.8-V synchronous pipelined SRAMs, equipped with QDR II architecture.

QDR II architecture consists of two separate ports: the read port and the write port to access the memory array.

The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.

Overview

CY7C1526KV18 CY7C1513KV18 CY7C1515KV18 72-Mbit QDR® II SRAM Four-Word Burst Architecture 72-Mbit QDR® II SRAM Four-Word Burst.

Key Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 333 MHz clock for high bandwidth.
  • Four-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
  • Echo cl.