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CY7C1523V18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1523V18 datasheet preview

CY7C1523V18 Details

Part number CY7C1523V18
Datasheet CY7C1523V18 CY7C1522V18 Datasheet (PDF)
File Size 491.53 KB
Manufacturer Cypress (now Infineon)
Description 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1523V18 page 2 CY7C1523V18 page 3

CY7C1523V18 Overview

The DDR-II SIO consists of two separate ports to access the memory array. The Read port has dedicated Data outputs and the Write port has dedicated Data inputs to pletely eliminate the need to “turn around’ the data bus required with mon I/O devices. Access to each port is acplished using a mon address bus.

CY7C1523V18 Key Features

  • 300-MHz clock for high bandwidth
  • 2-Word burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Synchronous internally self-timed writes
  • 1.8V core power supply with HSTL inputs and outputs
  • Variable drive HSTL output buffers

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