CY7C1513V18 - (CY7C15xxV18) SRAM 4-Word Burst Architecture

Product Overview

Cypress Semiconductor

Part number	CY7C1513V18
Manufacturer	Cypress Semiconductor
File Size	561.73 KB
Description	(CY7C15xxV18) SRAM 4-Word Burst Architecture
Datasheet	CY7C1513V18 Datasheet
Note	This datasheet PDF includes multiple part numbers: CY7C1513V18, CY7C1511V18. Please refer to the document for exact specifications by model.
Additional preview pages of the CY7C1513V18 datasheet.

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

Separate Independent Read and Write Data Ports.
Supports concurrent transactions.
250-MHz Clock for High Bandwidth.
4-Word Burst for reducing address bus frequency.
Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

📁 Similar Datasheet

CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)
CY7C1061DV33 - 16-Mbit (1 M X 16) Static RAM (Cypress)
CY7C1061G - 16-Mbit (1 M words x 16 bit) Static RAM (Cypress)

Other Datasheets by Cypress Semiconductor

Published: Oct 19, 2006 |