CY7C1513KV18 Datasheet | Cypress

CY7C1526KV18 CY7C1513KV18 CY7C1515KV18 72-Mbit QDR® II SRAM Four-Word Burst Architecture 72-Mbit QDR® II SRAM Four-Word Burst Architecture Features - Separate independent read and write data ports - Supports concurrent transactions - 333 MHz clock for high bandwidth - Four-word burst for reducing address bus frequency - Double data rate (DDR) interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz - Two input clocks (K and K) for precise DDR timing - SRAM uses rising edges only - Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches - Echo clocks (CQ and CQ) simplify data capture in high speed systems - Single multiplexed address input bus latches address inputs for read and write ports - Separate port selects for depth expansion - Synchronous internally self-timed writes - QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH - Operates similar to QDR I device with one cycle read latency when DOFF is asserted Low - Available in × 9, × 18, and × 36 configurations - Full data coherency, providing most current data - Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD - Supports both 1.5 V and 1.8 V I/O supply - Available in 165-ball fine pitch ball grid array (FBGA) package (13 × 15 × 1.4 mm) - Offered in both Pb-free and non Pb-free packages - Variable drive HSTL output buffers - JTAG 1149.1 patible test access port - Phase-locked loop (PLL) for accurate data placement Configurations...