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Cypress Semiconductor Electronic Components Datasheet

CY7C1512 Datasheet

64K x 8 Static RAM

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1CY 7C15 12
PRELIMINARY
CY7C1512
64K x 8 Static RAM
Features
• High speed
— tAA = 15 ns
• CMOS for optimum speed/power
• Low active power
— 770 mW
• Low standby power
— 28 mW
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE options
Functional Description
The CY7C1512 is a high-performance CMOS static RAM or-
ganized as 65,536 words by 8 bits. Easy memory expansion
is provided by an active LOW chip enable (CE1), an active
HIGH chip enable (CE2), an active LOW output enable (OE),
and three-state drivers. This device has an automatic pow-
er-down feature that reduces power consumption by more
than 75% when deselected.
Writing to the device is accomplished by taking chip enable
one (CE1) and write enable (WE) inputs LOW and chip enable
two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through
I/O7) is then written into the location specified on the address
pins (A0 through A15).
Reading from the device is accomplished by taking chip en-
able one (CE1) and output enable (OE) LOW while forcing
write enable (WE) and chip enable two (CE2) HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).
The CY7C1512 is available in standard TSOP type I and
450-mil-wide plastic SOIC packages.
Logic Block Diagram
Pin Configurations
SOIC
Top View
A0
A1
A2
A3
A4
A5
A6
A7
CE1
CE2
WE
OE
INPUT BUFFER
64K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
DataSheet4U.com
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
1512-1
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
NC
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
NC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 CE2
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
TSOP I
Top View
(not to scale)
1512-2
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Selection Guide
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Commercial
Maximum CMOS
DataSheet4US.ctaonmdby Current (mA)
Commercial
7C1512-15
15
140
5
7C1512-20
20
130
5
7C1512-25
25
120
5
7C1512-35
35
110
5
7C1512-70
70
110
5
DataShee
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
June 1996 – Revised October 1996
DataSheet4 U .com


Cypress Semiconductor Electronic Components Datasheet

CY7C1512 Datasheet

64K x 8 Static RAM

No Preview Available !

www.DataSheet4U.com
PRELIMINARY
CY7C1512
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .....................................–0.5V to VCC +0.5V
DC Input Voltage[1]..................................–0.5V to VCC +0.5V
Electrical Characteristics Over the Operating Range[3]
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL–STD–883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature[2]
0°C to +70°C
–40°C to +85°C
VCC
5V ± 10%
5V ± 10%
7C1512-15 7C1512-20 7C1512-25
Parameter
Description
Test Conditions
Min. Max. Min. Max. Min. Max. Unit
VOH
VOL
VIH
et4U.com
VIL
IIX
IOZ
IOS
ICC
ISB1
ISB2
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage[1]
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
2.4 2.4 2.4
0.4 0.4 0.4
2.2 VCC+ 2.2 VCC+ 2.2 VCC+
0.3 0.3 0.3
–0.3 0.8 –0.3 0.8 –0.3 0.8
Input Load Current
GND < VI < VCC
–1 +1 –1 +1 –1 +1
Output Leakage Current
GND < VI < VCC,Output Disabled –5 +5 –5 +5 –5 +5
Output Short Circuit Current[4] VCC = Max., VOUT = GND
–300
–300
–300
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
140 130 120
Automatic CE
Max. VCCD, CatEa1S>hVeeIHt4oUr .com 40 30 30
Power–Down Current
CE2 < VIL, VIN > VIH or VIN < VIL,
— TTL Inputs
f = fMAX
Automatic CE
Max. VCC, CE1 > VCC – 0.3V, 5 5 5
Power–Down Current
or CE2 < 0.3V, VIN > VCC – 0.3V,
— CMOS Inputs
or VIN < 0.3V, f=0
V
V
V
V
µA
µA
mA
mA
mA
mA
7C1512-35
7C1512-70
Parameter
Description
Test Conditions
Min. Max. Min. Max. Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4 0.4 V
VIH Input HIGH Voltage
VIL Input LOW Voltage[1]
2.2 VCC+ 0.3 2.2 VCC+ 0.3
–0.3 0.8 –0.3 0.8
V
V
IIX
Input Load Current
GND < VI < VCC
–1 +1 –1 +1 µA
IOZ Output Leakage Current GND < VI < VCC, Output Disabled –5 +5 –5 +5 µA
IOS
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
–300
–300
mA
ICC VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
ISB1 Automatic CE
Max. VCC, CE1 > VIH or CE2 < VIL,
Power-Down Current
VIN > VIH or VIN < VIL, f = fMAX
— TTL Inputs
110 110 mA
25 25 mA
ISB2 Automatic CE
Max. VCC, CE1 > VCC – 0.3V, or CE2 <
Power-Down Current
0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f=0
— CMOS Inputs
5
5 mA
Notes:
1. VIL (min.) = -2.0V for pulse durations of less than 20 ns.
2. TA is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
DataSheet4U4..coNmot more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
DataShee
DataSheet4 U .com
2


Part Number CY7C1512
Description 64K x 8 Static RAM
Maker Cypress Semiconductor
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CY7C1512 Datasheet PDF






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