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Cypress Semiconductor Electronic Components Datasheet

CY7C149 Datasheet

(CY7C148 / CY7C149) 1K x 4 Static RAM

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CY7C148
CY7C149
1Kx4 Static RAM
Features
• Automatic power-down when deselected (7C148)
• CMOS for optimum speed/power
• 25-ns access time
• Low active power
— 440 mW (commercial)
— 605 mW (military)
• Low standby power (7C148)
— 82.5 mW (25-ns version)
— 55 mW (all others)
5-volt power supply ± 10% tolerance, both commercial
and military
• TTL-compatible inputs and outputs
Functional Description
sion is provided by an active LOW chip select (CS) input and
three-state outputs. The CY7C148 remains in a low-power
mode as long as the device remains unselected; i.e., (CS) is
HIGH, thus reducing the average power requirements of the
device. The chip select (CS) of the CY7C149 does not affect
the power dissipation of the device.
Writing to the device is accomplished when the chip select
(CS) and write enable (WE) inputs are both LOW. Data on the
I/O pins (I/O0 through I/O3) is written into the memory loca-
tions specified on the address pins (A0 through A9).
Reading the device is accomplished by taking chip select (CS)
LOW while write enable (WE) remains HIGH. Under these
conditions, the contents of the location specified on the
address pins will appear on the four data I/O pins.
The I/O pins remain in a high-impedance state when chip se-
lect (CS) is HIGH or write enable (WE) is LOW.
The CY7C148 and CY7C149 are high-performance CMOS
static RAMs organized as 1024 by 4 bits. Easy memory expan-
Logic Block Diagram
INPUTBUFFER
A9
A8
A7 64 x 64
A6 ARRAY
A5
A4
COLUMN
DECODER
POWER
DOWN
(7C148)
A3 A2 A1 A0
Pin Configurations
DIP
Top View
I/O0
I/O1
I/O2
I/O3
CS
WE
C148–1
A6
A5
A4
A3
A0
A1
A2
CS
GND
1
2
3
4
5
6
7
8
9
18 VCC
17 A7
16 A8
15 A9
14 I/O 0
13 I/O 1
12 I/O 2
11 I/O 3
10 WE
C148–2
LCC
Top View
2 1 1817
A4 3
16 A8
A13 4
15 A9
A10 5
A11 6
A12 7
14 I/O 0
13 I/O1
12 I/O2
8 91011
C148–3
Selection Guide
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Commercial
Military
Maximum Standby
Current (mA)
Commercial
Military
Maximum Ratings
7C14825
25
90
15
7C14835
35
80
110
10
10
7C14845
45
80
110
10
10
7C14925
25
90
7C14935
35
80
110
7C14945
45
80
110
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
November 1989 - Revised November 1993


Cypress Semiconductor Electronic Components Datasheet

CY7C149 Datasheet

(CY7C148 / CY7C149) 1K x 4 Static RAM

No Preview Available !

CY7C148
CY7C149
Storage Temperature ...................................... −65°C to+150°C
Ambient Temperature with
Power Applied ................................................... −55°C to+125°C
Supply Voltage to Ground Potential
(Pin 18 to Pin 9)....................................................−0.5V to+7.0V
DC Voltage Applied to Outputs
in High Z State ......................................................−0.5V to+7.0V
DC Input Voltage .................................................−3.0V to +7.0V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Commercial
Military[1]
Ambient
Temperature
0°C to +70°C
55°C to +125°C
Note:
1. TA is the “instant on” case temperature.
VCC
5V ± 10%
5V ± 10%
Electrical Characteristics Over the Operating Range[2]
Parameter
VOH
VOL
VIH
VIL
IIX
IOZ
ICC
ISB
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
VCC Operating
Supply Current
Automatic CS
Power-Down Current
Test Conditions
VCC = Min., IOH = 4.0 mA
VCC = Min., IOL = 8.0 mA
GND < VI < VCC
GND < VO < VCC Output Disabled
Max. VCC, CS < VIL,
Output Open
Com’l
Mil
Max. VCC, CS > VIH 7C148
Only
Com’l
Mil
7C14825
7C14925
Min. Max.
2.4
0.4
2.0 6.0
3.0 0.8
10 10
50 50
90
15
7C14835, 45
7C14935, 45
Min. Max.
2.4
0.4
2.0 6.0
3.0 0.8
10 10
50 50
80
110
10
10
Unit
V
V
V
V
µA
µA
mA
mA
IPO
Peak Power-On
Current[3]
Max. VCC, CS > VIH 7C148
Only
Com’l
Mil
IOS
Output Short
Circuit Current[4]
GND < VO < VCC
Com’l
Mil
15
±275
10
10
±275
±350
mA
mA
Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
8 pF
8 pF
Notes:
2. See the last page of this specification for Group A subgroup testing information.
3. A pull-up resistor to VCC on the CS input is required to keep the device deselected during VCC power-up. Otherwise current will exceed values given (CY7C148
only).
4. For test purposes, not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
5. Tested initially and after any design or process changes that may affect these parameters.
2


Part Number CY7C149
Description (CY7C148 / CY7C149) 1K x 4 Static RAM
Maker Cypress Semiconductor
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CY7C149 Datasheet PDF






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