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CY7C1318AV18 - 18-Mbit DDR-II SRAM 2-Word Burst Architecture

Download the CY7C1318AV18 datasheet PDF. This datasheet also covers the CY7C1316AV18 variant, as both devices belong to the same 18-mbit ddr-ii sram 2-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CY7C1316AV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The CY7C1316AV18/CY7C1318AV18/CY7C1320AV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture.

The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

Overview

CY7C1316AV18 CY7C1318AV18 CY7C1320AV18 18-Mbit DDR-II SRAM 2-Word Burst.

Key Features

  • 18-Mb density (2M x 8, 1M x 18, 512K x 36).
  • 250-MHz clock for high bandwidth.
  • 2-Word burst for reducing address bus frequency.
  • Double Data Rate (DDR) interfaces (data transferred at 500 MHz) @ 250 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two output clocks (C and C) account for clock skew and flight time mismatching.
  • Echo clocks (CQ and CQ) simplify data capture in high-speed syste.