CY7C12701KV18
Key Features
- 550 MHz clock for high bandwidth
- 2-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz
- Available in 2.5 clock cycle latency
- Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high speed systems
- Data valid pin (QVLD) to indicate valid data on the output
- Synchronous internally self-timed writes
- DDR II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
- Operates similar to DDR I device with 1 Cycle Read Latency when DOFF is asserted LOW
