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CY7C1268KV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1268KV18 datasheet preview

CY7C1268KV18 Details

Part number CY7C1268KV18
Datasheet CY7C1268KV18-CypressSemiconductor.pdf
File Size 622.44 KB
Manufacturer Cypress (now Infineon)
Description 36-Mbit DDR II+ SRAM Two-Word Burst Architecture
CY7C1268KV18 page 2 CY7C1268KV18 page 3

CY7C1268KV18 Overview

CY7C1268KV18/CY7C1270KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency).

CY7C1268KV18 Key Features

  • 36-Mbit density (2 M × 18, 1 M × 36)
  • 550 MHz clock for high bandwidth
  • Two-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces (data transferred at
  • Available in 2.5 clock cycle latency
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Echo clocks (CQ and CQ) simplify data capture in high speed
  • Data valid pin (QVLD) to indicate valid data on the output
  • Synchronous internally self-timed writes

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