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CY7C1062G - 16-Mbit (512 K words x 32 bits) Static RAM

Description

CY7C1062G and CY7C1062GE are high-performance CMOS fast static RAM devices with embedded ECC.

Features

  • High speed.
  • tAA = 10 ns/15 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Low active and standby current.
  • ICC = 90 mA typical.
  • ISB2 = 20 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V.
  • 1.0-V data retention.
  • Automatic power-down when deselected.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C1062G CY7C1062GE 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns/15 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active and standby current ❐ ICC = 90 mA typical ❐ ISB2 = 20 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V ■ 1.0-V data retention ■ Automatic power-down when deselected ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 119-ball plastic ball grid array (PBGA) package Functional Description CY7C1062G and CY7C1062GE are high-performance CMOS fast static RAM devices with embedded ECC.
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