CY7C1049BN Datasheet | Cypress

512 K × 8 Static RAM Features - High speed - tAA = 17 ns - Low active power - 1073 mW (max.) - Low CMOS standby power - 2.75 mW (max.) - 2.0 V data retention (400 W at 2.0 V retention) - Automatic power-down when deselected - TTL-patible inputs and outputs - Easy memory expansion with CE and OE Features Logic Block Diagram 512 K × 8 Static RAM Functional Description The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is acplished by taking Chip Enable (CE) and Write Enable (WE) inputs...