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CY7C025E - Dual-Port Static RAM

Download the CY7C025E datasheet PDF. This datasheet also covers the CY7C024E variant, as both devices belong to the same dual-port static ram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • True dual-ported memory cells that allow simultaneous reads of the same memory location.
  • 4K × 16 organization (CY7C024E).
  • 8K × 16 organization (CY7C025E).
  • 8K × 18 organization (CY7C0251E).
  • 0.35-µ complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • High-speed access: 15 ns.
  • Low operating power: ICC = 180 mA (typ), ISB3 = 0.05 mA (typ).
  • Fully asynchronous operation.
  • Automatic power-down.
  • Expandable data bus to 32/36 bits or.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C024E-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C008 64K/128K x 8/9 Dual-Port Static RAM Cypress
CY7C008V 3.3V 64K/128K x 8/9 Dual-Port Static RAM Cypress
CY7C009 64K/128K x 8/9 Dual-Port Static RAM Cypress
CY7C009V 128K x 8 Dual-Port Static RAM Cypress
CY7C018 64K/128K x 8/9 Dual-Port Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C025 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM
CY7C0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM
CY7C0251AV Dual-Port Static RAM
CY7C0251E Dual-Port Static RAM
CY7C025AV Dual-Port Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C024E CY7C025E CY7C0251E 4K × 16 and 8K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY 4K × 16 and 8K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY Features ■ True dual-ported memory cells that allow simultaneous reads of the same memory location ■ 4K × 16 organization (CY7C024E) ■ 8K × 16 organization (CY7C025E) ■ 8K × 18 organization (CY7C0251E) ■ 0.35-µ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ High-speed access: 15 ns ■ Low operating power: ICC = 180 mA (typ), ISB3 = 0.