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CY7C024E - Dual-Port Static RAM

Key Features

  • True dual-ported memory cells that allow simultaneous reads of the same memory location.
  • 4K × 16 organization (CY7C024E).
  • 8K × 16 organization (CY7C025E).
  • 8K × 18 organization (CY7C0251E).
  • 0.35-µ complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • High-speed access: 15 ns.
  • Low operating power: ICC = 180 mA (typ), ISB3 = 0.05 mA (typ).
  • Fully asynchronous operation.
  • Automatic power-down.
  • Expandable data bus to 32/36 bits or.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C024 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM
CY7C0241 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM
CY7C0241AV Dual-Port Static RAM
CY7C024A 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM
CY7C024AV Dual-Port Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C024E CY7C025E CY7C0251E 4K × 16 and 8K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY 4K × 16 and 8K × 16/18 Dual-Port Static RAM with SEM, INT, BUSY Features ■ True dual-ported memory cells that allow simultaneous reads of the same memory location ■ 4K × 16 organization (CY7C024E) ■ 8K × 16 organization (CY7C025E) ■ 8K × 18 organization (CY7C0251E) ■ 0.35-µ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ High-speed access: 15 ns ■ Low operating power: ICC = 180 mA (typ), ISB3 = 0.