CY62157EV30 Datasheet | Cypress

CY62157EV30 Mo BL 8-Mbit (512K × 16) Static RAM 8-Mbit (512K × 16) Static RAM Features - Thin small outline package (TSOP) I package configurable as 512K × 16 or 1M × 8 static RAM (SRAM) - High speed: 45 ns - Temperature ranges - Industrial: - 40 °C to +85 °C - Automotive-A: - 40 °C to +85 °C - Automotive-E: - 40 °C to +125 °C - Wide voltage range: 2.20 V to 3.60 V - Pin patible with CY62157DV30 - Ultra low standby power - Typical standby current: 2 A - Maximum standby current: 8 A (Industrial) - Ultra low active power - Typical active current: 6 m A at f = 1 MHz - Easy memory expansion with CE1, CE2, and OE Features - Automatic power down when deselected - plementary Metal Oxide Semiconductor (CMOS) for optimum speed and power - Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA), Pb-free 44-pin thin small outline package (TSOP) II and 48-pin TSOP I packages Functional Description The CY62157EV30 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (Mo BL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE1HIGH or CE2 LOW), the outputs are disabled (OE HIGH), Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is active (CE1 LOW, CE2 HIGH and WE LOW). To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through...