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CY621472G - 4-Mbit (256K words x 16 bit) Static RAM

Download the CY621472G datasheet PDF. This datasheet also covers the CY62147G variant, as both devices belong to the same 4-mbit (256k words x 16 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CY62147G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Overview

CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Embedded ECC for single-bit error correction[1, 2].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY621472G30 4-Mbit (256K words x 16 bit) Static RAM
CY621472GN 4-Mbit (256K words x 16 bit) Static RAM
CY621472E30 4-Mbit (256 K x 16) Static RAM
CY62147CV18 256K x 16 Static RAM
CY62147CV25 256K x 16 Static RAM
CY62147CV30 256K x 16 Static RAM
CY62147CV33 256K x 16 Static RAM
CY62147DV18 4-Mb (256K x 16) Static RAM
CY62147DV30 4-Mbit (256K x 16) Static RAM
CY62147EV18 4-Mbit (256K x 16) Static RAM