CY6116A-25LMB, CY6 Datasheet - Cypress Semiconductor

CY6116A-25LMB 2K x 8 Static RAM

the memory location specified on the adĆ dress pins (A0 through A10). ReadingthedeviceisaccomplishedbytakĆ ing chip enable (CE) and output enable (OE) LOW while write enable (WE) reĆ mainsHIGH.Undertheseconditions,the contents of the memory location specified on the address pins will appear on the .

CY6116A-25LMB Features

* D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance

CY6-116.pdf