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CY14B104N Datasheet

Manufacturer: Cypress (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY14B104N datasheet preview

Datasheet Details

Part number CY14B104N
Datasheet CY14B104N CY14B104L Datasheet (PDF)
File Size 710.92 KB
Manufacturer Cypress (now Infineon)
Description 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104N page 2 CY14B104N page 3

CY14B104N Overview

The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory.

CY14B104N Key Features

  • II packages RoHS pliance
  • DQ7 CY14B104L CY14B104N HSB
  • A18 and Data DQ0
  • DQ7 for x8 configuration, Address A0
  • A17 and Data DQ0
  • DQ15 for x16 configuration
  • 198 Champion Court
  • San Jose, CA 95134-1709
  • 408-943-2600 Revised January 02, 2008
  • 48 FBGA
Cypress (now Infineon) logo - Manufacturer

More Datasheets from Cypress (now Infineon)

See all Cypress (now Infineon) datasheets

Part Number Description
CY14B104NA 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104K 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B104L 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104M 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K 1 Mbit (128K x 8) nvSRAM
CY14B101KA 1-Mbit nvSRAM
CY14B101L 1-Mbit (128K x 8) nvSRAM

CY14B104N Distributor

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