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6116A - CY6116A

Description

the memory location specified on the adĆ dress pins (A 0 through A 10).

Features

  • D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY611.

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Datasheet Details

Part number 6116A
Manufacturer Cypress Semiconductor
File Size 485.48 KB
Description CY6116A
Datasheet download datasheet 6116A Datasheet
Additional preview pages of the 6116A datasheet.

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    6116A: 11/8/89 Revision: Monday, November 8, 1993 www.DataSheet4U.com Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY6117A have an automatic powerĆdown feature, reducing the power consumption by 83% when deĆ selected. Writingtothedeviceisaccomplishedwhen the chip enable (CE) and write enable (WE) inputs are both LOW.
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