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6116A Datasheet CY6116A

Manufacturer: Cypress (now Infineon)

General Description

the memory location specified on the adĆ dress pins (A 0 through A 10).

ReadingthedeviceisaccomplishedbytakĆ ing chip enable (CE) and output enable (OE) LOW while write enable (WE ) reĆ mains HIGH.Undertheseconditions,the contents of the memory location specified on the address pins will appear on the I/O pins.

The I/O pins remain in highĆimpedance state when chip enable (CE ) is HIGH or write enable (WE) is LOW.

Overview

6116A: 11/8/89 Revision: Monday, November 8, 1993 www.DataSheet4U.

Key Features

  • D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY611.