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CY7C197BN - 256-Kbit (256K x 1) Static RAM

Description

The CY7C197BN[1] is a high performance CMOS Asynchronous SRAM organized as 256 K × 1 bits that supports an asynchronous memory interface.

Features

  • Fast access time: 15 ns.
  • Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V).
  • CMOS for optimum speed and power.
  • TTL compatible inputs and outputs.
  • Available in 24-pin DIP and 24-pin SOJ Logic Block Diagram Input Buffer General.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1006D 1-Mbit (256K x 4) Static RAM
CY7C1011G 2-Mbit (128K words x 16 bit) Static RAM
CY7C1041G 4-Mbit (256K words x 16 bit) Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C197BN 256-Kbit (256 K × 1) Static RAM 256-Kb (256 K × 1) Static RAM Features ■ Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs ■ Available in 24-pin DIP and 24-pin SOJ Logic Block Diagram Input Buffer General Description The CY7C197BN[1] is a high performance CMOS Asynchronous SRAM organized as 256 K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected. See the Truth Table on page 10 for a complete description of Read and Write modes. The CY7C197BN is available in 24-pin DIP and 24-pin SOJ package(s).
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