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CRF24010 - SiC RF Power MESFET

Features

  • 15 dB Small Signal Gain High Efficiency 10 W minimum P1dB Up to 2700 MHz Operation 48 V Operation High Breakdown Voltage High Temperature Operation.

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Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CRF24010D SiC RF Power MESFET
CRF24060 SiC RF Power MESFET
CRF24060D SiC RF Power MESFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power www.DataSheet4U.com density, and wider bandwidths compared to Si and GaAs transistors.
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