Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
1200
2.65
3.2
2.0
2.45
1
10
80
95
7.9
7.4
4
4.8
100
250
0.25
100
120
V
V
V
μA
μA
mΩ
S
VGS = 0V, ID = 100μA
VDS = VGS, ID = 1mA
VDS = VGS, ID = 10mA
VDS = VGS, ID = 1mA, TJ = 135ºC
VDS = VGS, ID = 10mA, TJ = 135ºC
VDS = 1200V, VGS = 0V
VDS = 1200V, VGS = 0V, TJ = 135ºC
VGS = 20V, VDS = 0V
VGS = 20V, ID = 20A
VGS = 20V, ID = 20A, TJ = 135ºC
VDS= 20V, IDS= 20A
VDS= 20V, IDS= 20A, TJ = 135ºC
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Eoss Coss Stored Energy
1915
120
13
62
VGS = 0V
pF VDS = 800V
f = 1MHz
μJ VAC = 25mV
td(on)v
tfv
td(off)v
trv
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Rise Time
13 VDD = 800V, VGS = 0/20V
24 ID = 20A
40 ns RG(ext) = 2.5Ω, RL = 40Ω
38 Timing relative to VDS
RG Internal Gate Resistance
5 Ω f = 1MHz, VAC = 25mV
Note
Fig. 11
Fig. 3
Fig. 6
Fig. 13
Fig. 14
Fig. 17
Built-in SiC Body Diode Characteristics
Symbol Parameter
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
Thermal Characteristics
Typ.
3.5
3.1
220
142
2.3
Max.
Unit
V
ns
nC
A
Test Conditions
VGS = -5V, IF=10A, TJ = 25ºC
VGS = -2V, IF=10A, TJ = 25ºC
VGS = -5V, IF=20A, TJ = 25ºC
VR = 800V,
diF/dt= 100A/μs
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
RθCS Case to Sink, w/ Thermal Compound
RθJA Thermal Resistance From Junction to Ambient
Gate Charge Characteristics
Typ.
0.44
0.25
Symbol Parameter
Qgs Gate to Source Charge
Qgd Gate to Drain Charge
Qg Gate Charge Total
Typ.
23.8
43.1
90.8
Max.
0.51
40
Unit
K/W
Test Conditions
Max.
Unit
Test Conditions
VDD = 800V, VGS = 0/20V
nC ID =20A
Per JEDEC24 pg 27
Note
Fig. 22
Note
Fig. 7
Note
Fig.
12
2 CMF20120D Rev. D
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