Datasheet4U Logo Datasheet4U.com

CGHV60075D5 - GaN HEMT Die

Key Features

  • 19 dB Typical Small Signal Gain at 4 GHz.
  • 17 dB Typical Small Signal Gain at 6 GHz.
  • 65% Typical Power Added Efficiency at 4 GHz.
  • 60% Typical Power Added Efficiency at 6 GHz.
  • 75 W Typical PSAT.
  • 50 V Operation.
  • High Breakdown Voltage.
  • Up to 6 GHz Operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CGHV14250 GaN HEMT Wolfspeed
CGHV14500F GaN HEMT MACOM
CGHV14800 GaN HEMT Wolfspeed
CGHV14800F1 800W GaN Transistor Wolfspeed
CGHV1F006S GaN HEMT Wolfspeed

Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGHV14250 GaN HEMT
CGHV14500 GaN HEMT
CGHV14800 GaN HEMT
CGHV14800F GaN HEMT
CGHV1F006S GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.