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CGHV60075D5 Datasheet Preview

CGHV60075D5 Datasheet

GaN HEMT Die

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CGHV60075D5
75 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
• 19 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% Typical Power Added Efficiency at 4 GHz
• 60% Typical Power Added Efficiency at 6 GHz
• 75 W Typical PSAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
APPLICATIONS
• 2-Way Private Radio
• Broaband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during shipment.
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV60075D5 Datasheet Preview

CGHV60075D5 Datasheet

GaN HEMT Die

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Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-source Voltage
VDSS
150
Gate-source Voltage
VGS -10, +2
Storage Temperature
TSTG -65, +150
Operating Junction Temperature
TJ 225
Maximum Drain Current1
IMAX 6.3
Maximum Forward Gate Current
IGMAX
10
Thermal Resistance, Junction to Case (packaged)2
RθJC 2.67
Thermal Resistance, Junction to Case (die only)
RθJC 1.66
Mounting Temperature
TS 320
Note1 Current limit for long term reliable operation.
Note2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier.
Units
VDC
VDC
˚C
˚C
A
mA
˚C/W
˚C/W
˚C
Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C)
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, 41.6W Dissipation
85˚C, 41.6W Dissipation
30 seconds
Characteristics
DC Characteristics
Gate Pinch-Off Voltage
Drain Current1
Drain-Source Breakdown Voltage
On Resistance
Gate Forward Voltage
RF Characteristics
Small Signal Gain
Saturated Power Output2,3
Drain Efficiency3
Intermodulation Distortion
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Scaled from PCM data
2 PSAT is defined as IG = 1.0 mA.
3 Drain Efficiency = POUT / PDC
Symbol
VP
IDSS
VBD
RON
VG-ON
GSS
PSAT
η
IM3
VSWR
CGS
CDS
CGD
Min.
-3.8
8
150
Typ.
-3.0
10
0.28
1.9
17
75
60
-30
9.51
3.6
0.26
Max.
–2.3
10 : 1
Units
Conditions
V VDS = 10 V, ID = 10 mA
A VDS = 6 V, VGS = 2.0 V
V VGS = -8 V, ID = 10 mA
VDS = 0.1 V
V IGS = 10 mA
dB VDD = 50 V, IDQ = 125 mA
W VDD = 50 V, IDQ = 125 mA
% VDD = 50 V, IDQ = 125 mA, PSAT = 75 W
dBc VDD = 50 V, IDQ = 125 mA,
POUT = 75 W PEP
No damage at all phase angles,
Y VDD = 50 V, IDQ = 125 mA
POUT = 75 W CW
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2 CGHV60075D5 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV60075D5
Description GaN HEMT Die
Maker Cree
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