CGHV59350 hemt equivalent, gan hemt.
* 5.2 - 5.9 GHz Operation
* 450 W Typical Output Power
* 10.5 dB Power Gain
* 55% Typical Drain Efficiency
* 50 Ohm Internally Matched
* <0.3.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN: 440217
CGHV.
R1 RES, 5.1OHM, +/- 1%, 1/16W,0603 R2 RES, 10OHM, +/- 1%, 1/16W,0603
C1,C2
CAP, 5.6pF, +/- 0.25 pF,250V, 0603
C3,C8
CAP, 20pF, +/- 0.25 pF,250V, 0603
C4,C9
CAP, 470PF, 5%, 100V, 0603, X
C5 CAP, 0.1MF, 1206, 250 V, X7R
L1 IND, FERRITE, 220 OH.
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