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CGHV59350 - GaN HEMT

General Description

R1 RES, 5.1OHM, +/- 1%, 1/16W,0603 R2 RES, 10OHM, +/- 1%, 1/16W,0603 C1,C2 CAP, 5.6pF, +/- 0.25 pF,250V, 0603 C3,C8 CAP, 20pF, +/- 0.25 pF,250V, 0603 C4,C9 CAP, 470PF, 5%, 100V, 0603, X C5 CAP, 0.1MF, 1206, 250 V, X7R L1 IND, FERRITE, 220 OHM, 0603 C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 C7

Key Features

  • 5.2 - 5.9 GHz Operation.
  • 450 W Typical Output Power.
  • 10.5 dB Power Gain.
  • 55% Typical Drain Efficiency.
  • 50 Ohm Internally Matched.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218. Package Type: PN: 440217 CGHV59350 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.55 GHz 5.9 GHz Output Power 440 445 490 Gain 10.5 10.