Overview: PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218. Package Type: PN: 440217 CGHV59350 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.55 GHz 5.9 GHz Output Power 440 445 490 Gain 10.5 10.5 11 Drain Efficiency 59 54 Note: Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm 55 Units W dB % Rev 0.
