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CGHV59070 Datasheet Preview

CGHV59070 Datasheet

RF Power GaN HEMT

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PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed
amplifier circuits. The transistor is available in a flange and pill package.
PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0
Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C)
Parameter
4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz
Power Gain at 50 V
13.7 14.2 14.5 14.6 14.3
Output Power at 50 V
84
93 101 102 95
Drain Efficiency at 50 V
55
56
57
56
54
Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W)
5.8 GHz
13.7
84
50
5.9 GHz
13.3
76
48
Units
dB
W
%
Features
4.4 - 5.9 GHz Operation
90 W POUT typical at 50 V
14 dB Power Gain
55 % Drain Efficiency
Internally Matched
Applications
Marine Radar
Weather Monitoring
Air Traffic Control
Maritime Vessel Traffic Control
Port Security
Troposcatter Communications
Beyond Line of Sight - BLOS
Satellite Communications
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV59070 Datasheet Preview

CGHV59070 Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
150
-10, +2
-65, +150
225
10.4
6.3
245
40
Thermal Resistance, Junction to Case3
RθJC 2.99
Thermal Resistance, Junction to Case3
RθJC 0.85
Case Operating Temperature2
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Simulated for the CGHV59070F at PDISS = 57.6 CW or PDISS = 70 W Pulsed
4 See also, the Power Dissipation De-rating Curve on Page 8.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, CW @ PDISS = 57 W
85˚C, 100 μsec, 10% Duty Cycle @ PDISS = 70 W
Characteristics
Symbol
Min.
Typ.
DC Characteristics1
Gate Threshold Voltage
Saturated Drain Current2
Drain-Source Breakdown
Voltage
VGS(th)
IDS
VBR
-3.8
7.8
150
-2.8
10.4
RF Characteristics3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Output Power
POUT1
100
Output Power
POUT1
95
Output Power
POUT1
76
Drain Efficiency
EFF1
57
Drain Efficiency
EFF2
54
Drain Efficiency
EFF3
48
Power Gain
PG1 – 14.5
Power Gain
PG2 – 14.3
Power Gain
PG3 – 13.3
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV59070F-AMP
4 Drain Efficiency = POUT / PDC
36
109
0.26
Max.
-2.3
5:1
Units
VDC VDS = 10 V, ID = 10.4 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 10.4 mA
Conditions
W VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
W VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
W VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
% VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
% VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
% VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
dB VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
dB VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
dB VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
Y No damage at all phase angles, VDD = 50 V, IDQ = 0.15A, PIN = 35.5 dBm Pulsed
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV59070 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV59070
Description RF Power GaN HEMT
Maker Cree
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