CGHV50200F - GaN HEMT

Cree

CGHV50200F Description

CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transisto.

CGHV50200F Features

* 4.4 - 5.0 GHz Operation
* 180 W Typical PSAT
* 11.5 dB Typical Power Gain
* 48% Typical Power Efficiency

CGHV50200F Applications

* and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 45400220107F Typical Performance Over 4.4-5.0

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CGHV50200F Datasheet Preview — Preview of CGHV50200F PDF

Datasheet Details

Part number: CGHV50200F
Manufacturer: Cree
File Size: 1.01 MB
Datasheet: CGHV50200F-Cree.pdf
Description: GaN HEMT

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GaN HEMT Cree

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