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CGHV50200F Datasheet Preview

CGHV50200F Datasheet

GaN HEMT

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CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities, which
makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom
applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use.
It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is
supplied in a ceramic/metal flange package, type 440217.
PN:
Package
TCyGpHeV: 45400220107F
Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
4.4 GHz
4.6 GHz
4.8 GHz
Small Signal Gain
14.9
14.9
14.9
CW Output Power1
173
177
170
Output Power2
100
100
126
Power Gain2
11.4
11.6
11.0
Power Added Efficiency2
49
47
48
5.0 GHz
15.1
166
101
11.8
48
1Note: Measured CW in the CGHV50200F-AMP at PIN = 43 dBm
2Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV50200F-AMP under OQPSK modulation, 1.6 Msps, PN23,
Alpha Filter = 0.2.
Units
dB
W
W
dB
%
Features
• 4.4 - 5.0 GHz Operation
• 180 W Typical PSAT
• 11.5 dB Typical Power Gain
• 48% Typical Power Efficiency
• 50 Ohm Internally Matched
Applications
• Troposcatter Communications
• Beyond Line of Sight – BLOS
• Satellite Communications
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV50200F Datasheet Preview

CGHV50200F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
VDSS
125
VGS
10, +2
TSTG
-65, +150
TJ
225
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
IGMAX
IDMAX
TS
τ
41.6
17
245
40
Thermal Resistance, Junction to Case
RθJC
0.81
Case Operating Temperature3
TC
-40, +125
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 See also, Power Dissipation Derating Curve on page 12
Electrical Characteristics
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
CW, 85˚C, PDISS = 166.4 W
Characteristics
Symbol
Min.
Typ.
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
VGS(th)
-3.4
-3.0
Gate Quiescent Voltage
VGS(Q)
-2.7
Saturated Drain Current2
IDS
33.28
37.4
Drain-Source Breakdown Voltage
VBR
150
RF Characteristics3 (TC = 25˚C, F0 = 4.4 - 5.0 GHz unless otherwise noted)
Small Signal Gain
GSS1
14
15.4
Small Signal Gain
GSS2
14
15.3
Small Signal Gain
GSS3
14.25
15.2
Power Gain4
GP1
10.5
12.1
Power Gain4
GP2
10.5
12.4
Power Gain4
GP3
10.5
12.2
Power Added Efficiency4
PAE1
30
42
Power Added Efficiency4
PAE2
30
37
Power Added Efficiency4
PAE3
30
40
OQPSK Linearity4
ACLR1
-29
OQPSK Linearity4
ACLR2
-34
OQPSK Linearity4
ACLR3
-34
Max.
-2.6
-25
-28
-26
Output Mismatch Stress
VSWR
3:1
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV50200F-AMP
4 Measured under 1.6 Msps OQPSK Modulation, PN23, Alpha Filter = 0.2
Units Conditions
VDC
VDS = 10 V, ID = 41.6 mA
VDC
VDS = 40 V, ID = 1.0 A
A
VDS = 6 V, VGS = 2 V
VDC
VGS = -8 V, ID = 41.6 mA
dB
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm, Freq = 4.4 GHz
dB
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm, Freq = 4.8 GHz
dB
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm, Freq = 5.0 GHz
dB
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
dB
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
dB
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
%
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
%
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
%
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
dBc
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
dBc
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
dBc
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
No damage at all phase angles,
Y
VDD = 40 V, ID = 1.0 A, CW POUT = 180 W
Copyright © 2013 - 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV50200F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/RF


Part Number CGHV50200F
Description GaN HEMT
Maker Cree
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