Datasheet4U Logo Datasheet4U.com

CGHV50200F - GaN HEMT

Features

  • 4.4 - 5.0 GHz Operation.
  • 180 W Typical PSAT.
  • 11.5 dB Typical Power Gain.
  • 48% Typical Power Efficiency.
  • 50 Ohm Internally Matched.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CGHV50200F GaN HEMT Wolfspeed
CGHV50200F GaN HEMT MACOM
CGHV59070 RF Power GaN HEMT Wolfspeed
CGHV59350 GaN HEMT Wolfspeed
CGHV14250 GaN HEMT Wolfspeed

Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGHV59070 RF Power GaN HEMT
CGHV59350 GaN HEMT
CGHV14250 GaN HEMT
CGHV14500 GaN HEMT
CGHV14800 GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 45400220107F Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 4.4 GHz 4.6 GHz 4.8 GHz Small Signal Gain 14.9 14.9 14.
Published: |