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CGHV40050 - GaN HEMT

Description

RES, 560Ohms, 0805, HIGH POWER SMT RES, 3.6Ohms, 1005, HIGH POWER SMT RES, SMT, 0805, 22 OHM RES, SMT, 0805, 1OHM CAP, 56 PF +/- 5%,, 250V, 0805, ATC 600F CAP, 24 pF +/- 5%, 250V, 0805, ATC 600F CAP, 1.1pF, +/-0.1pF, 250V, 0805, ATC600F CAP, 0.1 PF +/- 0.05 pF, 0805, ATC 600F CAP, 240pF, +/-5%, 0805

Features

  • Up to 4 GHz Operation.
  • 77 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 1.8 GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6 well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package.
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