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Cree

CGHV40050 Datasheet Preview

CGHV40050 Datasheet

GaN HEMT

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CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40050, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications up to 4 GHz. The reference HPA design in the
datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high
efficiency, high gain and wide bandwidth capabilities. The device can be
used for a range of applications from narrow band UHF, L and S Band as
PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6
well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and
pill package.
Typical Performance Over 800 MHz - 2.5 GHz (TC = 25˚C), 50 V
Parameter
800 MHz
1.2 GHz
1.4 GHz
Small Signal Gain
17.6
16.9
17.7
Saturated Output Power
65 70 63
Drain Efficiency @ PSAT
63 63
Input Return Loss
5 5.5
Note:
Measured CW in the CGHV40050F-AMP application circuit.
60
4.2
1.8 GHz
17.5
77
53
8
2.0 GHz
14.8
60
52
5
Features
Up to 4 GHz Operation
77 W Typical Output Power
17.5 dB Small Signal Gain at 1.8 GHz
Application Circuit for 0.8 - 2.0 GHz
• 53 % Efficiency at PSAT
50 V Operation
Units
dB
W
%
dB
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV40050 Datasheet Preview

CGHV40050 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGHV40050P at PDISS = 41.6 W.
4 Measured for the CGHV40050F at PDISS = 41.6 W.
5 See also, Power Derating Curve on Page 7.
Electrical Characteristics (TC = 25˚C)
Rating
150
-10, +2
-65, +150
225
10.4
6.3
245
40
3.04
3.11
-40, +80
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
85˚C
30 seconds
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 7.8
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 1.8 GHz unless otherwise noted)
Small Signal Gain
GSS 17.5
Power Gain
GP
Power Output at Saturation4
Drain Efficiency
PSAT
η
70
48
Output Mismatch Stress
VSWR
Dynamic Characteristics5
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV40050-AMP
4 PSAT is defined as IG= 1 mA.
5 Includes package
CGS
CDS
CGD
Typ.
-3.0
-2.7
10.4
19
15.5
77
53
16
5
0.3
Max.
-2.3
10 : 1
Units Conditions
VDC VDS = 10 V, ID = 10.4 mA
VDC VDS = 50 V, ID = 0.3 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 10.4 mA
dB VDD = 50 V, IDQ = 0.3 A
dB VDD = 50 V, IDQ = 0.3 A, POUT = PSAT
W VDD = 50 V, IDQ = 0.3 A
% VDD = 50 V, IDQ = 0.3 A, POUT = PSAT
Y No damage at all phase angles,
VDD = 50 V, IDQ = 0.3 A, POUT = 50 W CW
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV40050 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV40050
Description GaN HEMT
Maker Cree
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