Datasheet Summary
50 W, DC
- 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as
PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6 well as multi-octave bandwidth...
