CGHV35400F Overview
Key Features
- 2.9 - 3.5 GHz Operation
- 400 W Typical Output Power
- 10.5 dB Power Gain
- 60% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop Subject to change without notice. 1 Rev 2.0 - May 2015
| Part | CGHV35400F |
|---|---|
| Description | GaN HEMT |
| Manufacturer | Cree |
| Size | 486.33 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| ATF-54143 | Avago Technologies | Pseudomorphic HEMT |
| SGK1314-50A | SUMITOMO | Ku-Band Internally Matched GaN-HEMT |
| GNP2070TD-Z | ROHM | 650V Enhancement mode GaN HEMT |