CGHV35400F - GaN HEMT

Cree

CGHV35400F Description

CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high el.
RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.

CGHV35400F Features

* 2.9 - 3.5 GHz Operation
* 400 W Typical Output Power
* 10.5 dB Power Gain
* 60% Typical Drain Efficiency
* 50 Ohm Internally Matched

CGHV35400F Applications

* The transistor is supplied in a ceramic/metal flange package, type 440210. PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Output Power 375 400 360 Gain 9.8 10 9.6 Drain Efficiency 66 59 57

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CGHV35400F Datasheet Preview — Preview of CGHV35400F PDF

Datasheet Details

Part number: CGHV35400F
Manufacturer: Cree
File Size: 486.33 KB
Datasheet: CGHV35400F-Cree.pdf
Description: GaN HEMT

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GaN HEMT Cree

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