Datasheet4U Logo Datasheet4U.com

CGHV35400F - GaN HEMT

General Description

RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 33uF, 20%, G

Key Features

  • 2.9 - 3.5 GHz Operation.
  • 400 W Typical Output Power.
  • 10.5 dB Power Gain.
  • 60% Typical Drain Efficiency.
  • 50 Ohm Internally Matched.

📥 Download Datasheet

Full PDF Text Transcription for CGHV35400F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CGHV35400F. For precise diagrams, and layout, please refer to the original PDF.

CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility tran...

View more extracted text
ee’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210. PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Output Power 375 400 360 Gain 9.8 10 9.6 Drain Efficiency 66 59 57 Note: Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width,

More Datasheets from Cree (now Wolfspeed)

Part Number Description
CGHV35060MP GaN HEMT
CGHV35150 GaN HEMT
CGHV31500F GaN HEMT
CGHV14250 GaN HEMT
CGHV14500 GaN HEMT
CGHV14800 GaN HEMT
CGHV14800F GaN HEMT
CGHV1F006S GaN HEMT
CGHV1F025S GaN HEMT
CGHV1J006D GaN HEMT Die