CGHV35400F hemt equivalent, gan hemt.
* 2.9 - 3.5 GHz Operation
* 400 W Typical Output Power
* 10.5 dB Power Gain
* 60% Typical Drain Efficiency
* 50 Ohm Internally Matched
* <0..
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN: Package
TCyGpHeV: 43450420105F
Typica.
RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM C.
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