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CGHV35400F Datasheet Preview

CGHV35400F Datasheet

GaN HEMT

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CGHV35400F
400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN:
Package
TCyGpHeV: 43450420105F
Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier
Parameter
2.9 GHz
3.2 GHz
3.5 GHz
Output Power
375 400 360
Gain
9.8 10 9.6
Drain Efficiency
66 59 57
Note:
Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.
Units
W
dB
%
Features
• 2.9 - 3.5 GHz Operation
• 400 W Typical Output Power
• 10.5 dB Power Gain
• 60% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV35400F Datasheet Preview

CGHV35400F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Pulse Width
PW 500 µs
Duty Cycle
DC 10 %
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
80
24
245
40
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
25˚C
25˚C
25˚C
25˚C
Pulsed Thermal Resistance, Junction to Case
Pulsed Thermal Resistance, Junction to Case
RθJC
0.22
˚C/W
100 μsec, 10%, 85˚C , PDISS = 418 W
RθJC
0.30
˚C/W
500 μsec, 10%, 85˚C, PDISS = 418 W
Case Operating Temperature
TC
-40, +85
˚C
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics
Characteristics
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
Symbol
VGS(th)
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS
Drain-Source Breakdown Voltage
VBR
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
Min.
-3.8
62.7
150
Typ.
-3.0
-2.7
75.5
Max.
-2.3
Units
Conditions
VDC VDS = 10 V, ID = 83.6 mA
VDC VDS = 45 V, ID = 0.5 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 83.6 mA
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV35400F
Description GaN HEMT
Maker Cree
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CGHV35400F Datasheet PDF






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