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CGHV35150 - GaN HEMT

General Description

RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1 OHM, +/- 1%, 1/16W, 0603 CAP, 10pF, +/- 1%, 250V, 0805 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 10.0pF, +/-5%,250V, 0603 CAP, 470PF, 5%, 100V, 0603, X CAP, 33000PF, 0805,100V, X7R CAP 10uF 16V TANTALUM CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP, 33 UF, 20%, G CASE

Key Features

  • Rated Power = 150 W @ TCASE = 85°C.
  • Operating Frequency = 2.9 - 3.5 GHz.
  • Transient 100 µsec - 300 µsec @ 20% Duty Cycle.
  • 13.5 dB Power Gain @ TCASE = 85°C.
  • 50 % Typical Drain Efficiency @ TCASE = 85°C.
  • Input Matched.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6 Typical Performance 3.1 - 3.5 GHz (TC = 85˚C) Parameter 3.1 GHz 3.2 GHz Output Power 180 180 Gain 13.5 13.5 Drain Efficiency 50 49 3.3 GHz 180 13.5 50 3.4 GHz 170 13.3 49 3.5 GHz 150 12.