CGHV35150
CGHV35150 is GaN HEMT manufactured by Cree.
150 W, 2900
- 3500 MHz, 50V, Ga N HEMT for S-Band Radar Systems
Cree’s CGHV35150 is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9
- 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
PNPa: Cck Ga Hg Ve3T5y1p5e0: F44/0C1G9H3V/3454105200P6
Typical Performance 3.1
- 3.5 GHz (TC = 85˚C)
Parameter
3.1 GHz
3.2 GHz
Output Power
Gain
13.5 13.5
Drain Efficiency
3.3 GHz 180 13.5 50
3.4 GHz 170 13.3 49
3.5 GHz 150 12.7 48
Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 d Bm
Units d B d Bc %
Features
:
- Rated Power = 150 W @ TCASE = 85°C
- Operating Frequency = 2.9
- 3.5 GHz
- Transient 100 µsec
- 300 µsec @ 20% Duty Cycle
- 13.5 d B Power Gain @ TCASE = 85°C
- 50 % Typical Drain Efficiency @ TCASE = 85°C
- Input Matched
- <0.3 d B Pulsed Amplitude...
