CGHV35150 hemt equivalent, gan hemt.
* Rated Power = 150 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.5 GHz
* Transient 100 µsec - 300 µsec @ 20% Duty Cycle
* 13.5 dB Power Gain @ TCASE.
The transistor is supplied in a ceramic/metal flange and pill package.
PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/345410520.
RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1 OHM, +/- 1%, 1/16W, 0603 CAP, 10pF, +/- 1%, 250V, 0805 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 10.0pF, +/-5%,250V, 0603 CAP, 470PF, 5%, 100V, 0603, X CAP, 33000PF, 0805,100V, X7R CAP 10uF 16V TANTALUM CAP, 1.
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