• Part: CGHV35150
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 506.83 KB
CGHV35150 Datasheet (PDF) Download
Cree
CGHV35150

Overview

  • Rated Power = 150 W @ TCASE = 85°C
  • Operating Frequency = 2.9 - 3.5 GHz
  • Transient 100 µsec - 300 µsec @ 20% Duty Cycle
  • 13.5 dB Power Gain @ TCASE = 85°C
  • 50 % Typical Drain Efficiency @ TCASE = 85°C
  • Input Matched
  • <0.3 dB Pulsed Amplitude Droop Rev 1.0 - May 2015 Subject to change without notice.