CGHV35150 Description
CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Measured in the...
CGHV35150 Key Features
- Rated Power = 150 W @ TCASE = 85°C
- Operating Frequency = 2.9
- 3.5 GHz
- Transient 100 µsec
- 300 µsec @ 20% Duty Cycle
- 13.5 dB Power Gain @ TCASE = 85°C
- 50 % Typical Drain Efficiency @ TCASE = 85°C
- Input Matched
- <0.3 dB Pulsed Amplitude Droop
- May 2015