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CGHV35060MP - GaN HEMT

Key Features

  • Reference design amplifier 3.1 - 3.5 GHz.
  • 75W Typical output power.
  • 14.5 dB power gain.
  • 67% Drain efficiency.
  • Internally pre-matched on input, unmatched output Rev 0.
  • April 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forwar.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.1-3.5GHz high power amplifier. PN: CGHV35060MP Typical Performance Over 3.1 - 3.5 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.3 GHz 3.5 GHz Units Gain 14.5 14.3 13.