Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
CW Thermal Resistance, Junction to Case3
Pulsed Thermal Resistance, Junction to Case
Case Operating Temperature4
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
RθJC
RθJC
TC
150
-10, +2
-65, +150
225
10.4
6.3
245
2.6
1.95
-40, +107
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV35060MP
4 See also, the Power Dissipation De-rating Curve on Page 4.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 52 W
85˚C, PDISS = 62 W, 100 μsec 10%
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
Gate Quiescent Voltage
Saturated Drain Current2
VGS(Q)
–
-2.7
IDS 8.4 10.4
–
–
Drain-Source Breakdown Voltage
VBR 150
–
–
RF Characteristics4 (TC = 25˚C, F0 = 3.3 GHz unless otherwise noted)
Saturated Output Power3
PSAT
–
75
–
VDC VDS = 10 V, ID = 10.4 mA
VDC VDS = 50 V, ID = 125 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 10.4 mA
W VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm
Pulsed Drain Efficiency3
Gain3
η – 67 – % VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm
G
– 14.5 –
dB VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm
Gain5
G – 17 – dB VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
WCDMA Linearity5
ACLR
–
-35
–
dBc
VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
Drain Efficiency5
Output Mismatch Stress3
Dynamic Characteristics
η
VSWR
–
–
35 – % VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
–
TBD
Y No damage at all phase angles, VDD = 50 V, IDQ =
125 mA, POUT = 60 W Pulsed
Input Capacitance6
CGS – 32.16 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance6
CDS – 4.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD – 0.5 –
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µs, Duty Cycle = 10%
4 Measured in CGHV35060MP-TB.
5 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V.
6 Includes package.
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
2 CGHV35060MP Rev 0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
