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CGHV35060MP Datasheet Preview

CGHV35060MP Datasheet

GaN HEMT

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PRELIMINARY
CGHV35060MP
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high
electron mobility transistor (HEMT) optimized for S Band performance. The
CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz
while the input matched transistor provides optimal gain, power and efficiency
in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The
typical performance plots in the datasheet are derived with CGHV35060MP
matched into a 3.1-3.5GHz high power amplifier.
PN: CGHV35060MP
Typical Performance Over 3.1 - 3.5 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.3 GHz
3.5 GHz
Units
Gain
14.5
14.3
13.8
dB
Output Power
88 88 75 W
Drain Efficiency
61
67
64
%
Note:
Measured in the CGHV35060MP-TB amplifier circuit, under 100 μs pulse width, 10% duty cycle, PIN = 35 dBm.
Features
• Reference design amplifier 3.1 - 3.5 GHz
75W Typical output power
14.5 dB power gain
• 67% Drain efficiency
Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV35060MP Datasheet Preview

CGHV35060MP Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
CW Thermal Resistance, Junction to Case3
Pulsed Thermal Resistance, Junction to Case
Case Operating Temperature4
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
RθJC
RθJC
TC
150
-10, +2
-65, +150
225
10.4
6.3
245
2.6
1.95
-40, +107
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV35060MP
4 See also, the Power Dissipation De-rating Curve on Page 4.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 52 W
85˚C, PDISS = 62 W, 100 μsec 10%
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
Gate Quiescent Voltage
Saturated Drain Current2
VGS(Q)
-2.7
IDS 8.4 10.4
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics4 (TC = 25˚C, F0 = 3.3 GHz unless otherwise noted)
Saturated Output Power3
PSAT
75
VDC VDS = 10 V, ID = 10.4 mA
VDC VDS = 50 V, ID = 125 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 10.4 mA
W VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm
Pulsed Drain Efficiency3
Gain3
η – 67 – % VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm
G
– 14.5 –
dB VDD = 50 V, IDQ = 125 mA, PIN = 35 dBm
Gain5
G – 17 – dB VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
WCDMA Linearity5
ACLR
-35
dBc
VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
Drain Efficiency5
Output Mismatch Stress3
Dynamic Characteristics
η
VSWR
35 – % VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
TBD
Y No damage at all phase angles, VDD = 50 V, IDQ =
125 mA, POUT = 60 W Pulsed
Input Capacitance6
CGS – 32.16 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance6
CDS – 4.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD – 0.5 –
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µs, Duty Cycle = 10%
4 Measured in CGHV35060MP-TB.
5 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V.
6 Includes package.
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
2 CGHV35060MP Rev 0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV35060MP
Description GaN HEMT
Maker Cree
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