Datasheet Details
| Part number | CGHV31500F |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 401.49 KB |
| Description | GaN HEMT |
| Datasheet | CGHV31500F-Cree.pdf |
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Overview: PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 43410520107F Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.9 GHz 3.1 GHz Output Power 665 705 645 Gain 13.2 13.5 13.1 Drain Efficiency 66 68 62 Note: Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm. Units W dB % Rev 1.
| Part number | CGHV31500F |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 401.49 KB |
| Description | GaN HEMT |
| Datasheet | CGHV31500F-Cree.pdf |
|
|
|
Compare CGHV31500F distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CGHV31500F1 | 500W GaN HPA | MACOM |
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CGHV31500F1 | 500W GaN HEMT | Wolfspeed |
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