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CGHV31500F Datasheet Preview

CGHV31500F Datasheet

GaN HEMT

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PRELIMINARY
CGHV31500F
500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN:
Package
TCyGpHeV: 43410520107F
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Output Power
665 705 645
Gain
13.2
13.5
13.1
Drain Efficiency
66 68 62
Note:
Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 675 W Typical Output Power
• 13.3 dB Power Gain
• 66% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV31500F Datasheet Preview

CGHV31500F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Pulse Width
PW 500
Duty Cycle
DC 10
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
80
24
245
40
Pulsed Thermal Resistance, Junction to Case
RθJC 0.22
Pulsed Thermal Resistance, Junction to Case
RθJC 0.30
Case Operating Temperature
TC -40, +85
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
Electrical Characteristics
Units
µs
%
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
100 μsec, 10%, 85˚C , PDISS = 376 W
500 μsec, 10%, 85˚C, PDISS = 376 W
Characteristics
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
Symbol
VGS(th)
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS
Drain-Source Breakdown Voltage
VBR
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
Min.
-3.8
62.7
150
Typ.
-3.0
-2.7
75.5
Max.
-2.3
Units
Conditions
VDC VDS = 10 V, ID = 83.6 mA
VDC VDS = 50 V, ID = 0.5 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 83.6 mA
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV31500F
Description GaN HEMT
Maker Cree
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CGHV31500F Datasheet PDF






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