CGHV31500F
CGHV31500F is GaN HEMT manufactured by Cree.
PRELIMINARY
500 W, 2700
- 3100 MHz, 50-Ohm Input/Output Matched, Ga N HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7
- 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217.
PN: Package
TCy Gp He V: 43410520107F
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Output Power
665 705 645
Gain
Drain Efficiency
66 68 62
Note: Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 d Bm.
Units W d B %
Rev 1.0
- August 2015
- PRELIMINARY
Features
- 2.7
- 3.1 GHz Operation
- 675 W Typical Output Power
- 13.3 d B Power Gain
- 66% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 d B Pulsed Amplitude...
