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CGHV31500F Datasheet, Cree

CGHV31500F hemt equivalent, gan hemt.

CGHV31500F Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 401.49KB)

CGHV31500F Datasheet
CGHV31500F
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 401.49KB)

CGHV31500F Datasheet

Features and benefits


* 2.7 - 3.1 GHz Operation
* 675 W Typical Output Power
* 13.3 dB Power Gain
* 66% Typical Drain Efficiency
* 50 Ohm Internally Matched
* <0..

Application

The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 43410520107F Typica.

Description

RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM C.

Image gallery

CGHV31500F Page 1 CGHV31500F Page 2 CGHV31500F Page 3

TAGS

CGHV31500F
GaN
HEMT
Cree

Manufacturer


Cree

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