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CGHV1F025S - GaN HEMT

Description

RES, 100, OHM, +1/-1%, 1/16 W, 0603 RES, 10, OHM, +1/-1%, 1/16 W, 0603 CAP, 1pF, ±0.1 pF, 0603, ATC CAP, 1.8pF, ±0.1 pF, 0603, ATC CAP, 0.6pF, ±0.1 pF, 0603, ATC CAP, 10 pF, ±5%, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 1.0 UF, 100V, 10%, X7R, 1210 CAP, 10 UF, 16

Features

  • Up to 15 GHz Operation.
  • 25 W Typical Output Power.
  • 11 dB Gain at 9.4 GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency. PackagPeN:TyCpGeH:V31xF40D25FSN Typical Performance 8.9 - 9.6 GHz (TC = 25˚C) , 40 V Parameter 8.9 GHz 9.2 GHz 9.
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