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CGHV1F025S Datasheet Preview

CGHV1F025S Datasheet

GaN HEMT

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CGHV1F025S
25 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates
on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead
(DFN) package. Under reduced power, the transistor can operate below 40V to as low as
20V VDD, maintaining high gain and efficiency.
PackaPgNe:TCyGpHe:V31xF40D2F5NS
Typical Performance 8.9 - 9.6 GHz (TC = 25˚C) , 40 V
Parameter
8.9 GHz
9.2 GHz
9.4 GHz
Output Power @ PIN = 37 dBm
24 29 27
Drain Efficiency @ PIN = 37 dBm
43.5
48.5
48
Gain @ PIN = 0 dBm
10.7
11.6
11.3
Note:
Measured in the CGHV1F025S-AMP1 application circuit. Pulsed 100 µs 10% duty.
9.6 GHz
25
46
11.1
Units
W
%
dB
Features
Up to 15 GHz Operation
25 W Typical Output Power
11 dB Gain at 9.4 GHz
Application circuit for 8.9 - 9.6 GHz
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV1F025S Datasheet Preview

CGHV1F025S Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3,4
Thermal Resistance, Junction to Case5
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
TC
RθJC
100
-10, +2
-65, +150
225
4.8
2
245
-40, +150
3.4
Volts
Volts
˚C
˚C
mA
A
˚C
˚C
˚C/W
25˚C
25˚C
25˚C
25˚C
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 Simulated at PDISS = 24 W
4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance.
5 Pulsed (100 µs, 10% Duty). Rth for Cree’s reference design using a 10 mil Rogers 5880 PCB with 31 (Ø13 mil) Vias would be 3.6 °C/W.
For CW operation, the Rth numbers increase to 5°C/W for just the device, and 7.3 °C/W including the board.
Electrical Characteristics (TC = 25˚C) - 40 V Typical
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 3.8
Drain-Source Breakdown Voltage
V(BR)DSS
100
RF Characteristics3 (TC = 25˚C, F0 = 5.55 GHz unless otherwise noted)
Gain
G–
Output Power4
Drain Efficiency4
POUT
η
Output Mismatch Stress4
Dynamic Characteristics
Input Capacitance5
Output Capacitance5
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV1F025S-TB
4 Pulsed 100 µs, 10% duty cycle
5 Includes package
VSWR
CGS
CDS
CGD
-
Typ.
-3.0
-2.7
4.3
14.9
44.7
49.5
10 : 1
5.9
2
0.21
Max.
-2.3
-
-
-
Units
Conditions
VDC VDS = 10 V, ID = 4.8 mA
VDC VDS = 40 V, ID = 240 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 4.8 mA
dB
dBm
%
Y
VDD = 40 V, IDQ = 120 mA, PIN = 10 dBm
VDD = 40 V, IDQ = 120 mA, PIN = 33.5 dBm
VDD = 40 V, IDQ = 120 mA, PIN = 33.5 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 120 mA, PIN = 33.5 dBm
pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Copyright © 2014 - 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV1F025S Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV1F025S
Description GaN HEMT
Maker Cree
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