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CGHV1F006S Datasheet Preview

CGHV1F006S Datasheet

GaN HEMT

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CGHV1F006S
6 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application
circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -
9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,
surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can
operate below 40V to as low as 20V VDD, maintaining high gain and efficiency.
PackaPgNe:TCyGpHe:V31xF40D0F6NS
Typical Performance 5.5-6.5 GHz (TC = 25˚C) , 40 V
Parameter
5.5 GHz
Small Signal Gain
15.4
6.0 GHz
16.5
Output Power @ PIN = 28 dBm
38.6
39.3
Drain Efficiency @ PIN = 28 dBm
55
57
Note:
Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.
6.5 GHz
17.8
39.0
52
Units
dB
dBm
%
Features for 40 V in CGHV1F006S-AMP
• Up to 15 GHz Operation
• 8 W Typical Output Power
• 17 dB Gain at 6.0 GHz
• 15 dB Gain at 9.0 GHz
• Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.
• High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV1F006S-AMP1
CGHV1F006S-AMP2
CGHV1F006S-AMP3
CGHV1F006S-AMP4
Operating Frequency
5.85 - 7.2 GHz
7.9 - 8.4 GHz
8.5 - 9.6 GHz
4.9 - 5.9 GHz
Amplifier Class
Class A/B
Class A/B
Class A/B
Class A/B
Subject to change without notice.
www.cree.com/rf
Operating Voltage
40 V
40 V
40 V
20 V
1




Cree

CGHV1F006S Datasheet Preview

CGHV1F006S Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3,4
Thermal Resistance, Junction to Case5
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
TC
RθJC
100
-10, +2
-65, +150
225
1.2
0.95
245
-40, +150
14.5
Volts
Volts
˚C
˚C
mA
A
˚C
˚C
˚C/W
25˚C
25˚C
25˚C
25˚C
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 Simulated at PDISS = 2.4 W
4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance.
5 The RTH for Cree’s application circuit, CGHV1F006S-AMP, with 31 (Ø11 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9°C/W. The total RTH
from the heat sink to the junction is 14.5°C/W + 3.9°C/W = 18.4°C/W.
Electrical Characteristics (TC = 25˚C) - 40 V Typical
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.6
-3.0
-2.4
VDC VDS = 10 V, ID = 1.2 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 40 V, ID = 60 mA
Saturated Drain Current2
IDS -1.0
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V(BR)DSS
100
RF Characteristics3 (TC = 25˚C, F0 = 5.925 GHz unless otherwise noted)
Small Signal Gain3,4
G 15.15
16.8
-
VDC VGS = -8 V, ID = 1.2 mA
dB VDD = 40 V, IDQ = 60 mA, PIN = 10 dBm
Output Power3,4
POUT 37.5 38.7
dBm
VDD = 40 V, IDQ = 60 mA, PIN = 26 dBm
Drain Efficiency3,4
Output Mismatch Stress4
Dynamic Characteristics
η 35 45
VSWR - 10 : 1
-
-
% VDD = 40 V, IDQ = 60 mA, PIN = 26 dBm
Y
No damage at all phase angles,
VDD = 40 V, IDQ = 60 mA, PIN = 26 dBm
Input Capacitance5
CGS 1.3 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
CDS 0.31 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.04 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in Cree’s production test fixture. This fixture is designed for high volume testing at 5.925 GHz
4 Unmodulated Pulsed Signal 100 µs, 10% duty cycle
5 Includes package
Copyright © 2013 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV1F006S Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV1F006S
Description GaN HEMT
Maker Cree
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