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CGHV14800F Datasheet Preview

CGHV14800F Datasheet

GaN HEMT

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CGHV14800F
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic
control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking
radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically
delivering >65% drain efficiency. The package options are ceramic/metal flange package.
Package
PN:
CTGypHeV: 1444800101F7
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
1000
940
940
920
1.4 GHz
910
Power Gain
15.5
15.2
15.2
15.1
15.1
Drain Efficiency
74 73 73 69 67
Note:
Measured in the CGHV14800-AMP amplifier circuit, under 100 μs pulse width, 5% duty cycle, PIN = 44.5 dBm.
Units
W
dB
%
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• 910 W Typical Output Power
• 14 dB Power Gain
• 70% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
Internally input and output matched
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV14800F Datasheet Preview

CGHV14800F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum DC Current1
Maximum Duty Cycle
Symbol
VDSS
VGS
TSTG
TJ
IGMAX
IDCMAX
D
Soldering Temperature2
Screw Torque
TS
τ
CW Thermal Resistance, Junction to Case3
Pulsed Thermal Resistance, Junction to Case3
Case Operating Temperature4
RθJC
RθJC
TC
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV14800F
4 See also, the Power Dissipation De-rating Curve on Page 6
Electrical Characteristics
Rating
125
-10, +2
-65, +150
225
132
24
5
245
40
0.47
0.16
-40, +100
Units
Volts
Volts
˚C
˚C
mA
A
%
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
PDISS = 398 W, 45˚C
PDISS = 664 W, 100 µsec, 5%, 85˚C
PDISS = 664 W, 100 µsec, 5%
Characteristics
Symbol
Min.
Typ.
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
Gate Quiescent Voltage
VGS(Q)
-2.7
Saturated Drain Current2
IDS
80.3
123.5
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Output Power
POUT 804 977
Drain Efficiency
DE 62 71
Output Power
POUT 795 933
Drain Efficiency
DE 63 71
Output Power
POUT 750 912
Drain Efficiency
DE 57 67
Pulsed Amplitude Droop
D -0.3
Output Mismatch Stress
VSWR
9:1
Dynamic Characteristics
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV14800-AMP. Pulse Width = 100 μS, Duty Cycle = 5%.
326
643
3.9
Max.
-2.3
Units Conditions
VDC VDS = 10 V, ID = 83.6 mA
VDC VDS = 50 V, ID = 800 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 83.6 mA
W VDD = 50 V, IDQ = 800 mA, F = 1.2 GHz, PIN = 44.5 dBm
% VDD = 50 V, IDQ = 800 mA, F = 1.2 GHz, PIN = 44.5 dBm
W VDD = 50 V, IDQ = 800 mA, F = 1.23 GHz, PIN = 44.5 dBm
% VDD = 50 V, IDQ = 800 mA, F = 1.23 GHz, PIN = 44.5 dBm
W VDD = 50 V, IDQ = 800 mA, F = 1.4 GHz, PIN = 44.5 dBm
% VDD = 50 V, IDQ = 800 mA, F = 1.4 GHz, PIN = 44.5 dBm
dB VDD = 50 V, IDQ = 800 mA
Y No damage at all phase angles,
VDD = 50 V, IDQ = 800 mA, PIN = 44.5 dBm Pulsed
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2016 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV14800 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV14800F
Description GaN HEMT
Maker Cree
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CGHV14800F Datasheet PDF






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