CGHV14800
800 W, 1200
- 1400 MHz, 50 V, Ga N HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2
- 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The Ga N HEMT typically operates at 50 V, typically deliverying >65% drain efficiency. The package options are ceramic/metal flange package.
Package PN:
CTGyp He V: 1444800101F7
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
900 900 870 870
Power Gain
Drain Efficiency
68 67 67 63
Note: Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty...
