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CGHV14800 Datasheet Preview

CGHV14800 Datasheet

GaN HEMT

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CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic
control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking
radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically
deliverying >65% drain efficiency. The package options are ceramic/metal flange package.
Package
PN:
CTGypHeV: 1444800101F7
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
900 900 870 870
Power Gain
14.5
14.5
14.0
14.0
Drain Efficiency
68 67 67 63
Note:
Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle, PIN = 45 dBm.
1.4 GHz
920
14.0
62
Units
W
dB
%
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• 800 W Minimum Output Power
• 14 dB Power Gain
• 69% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
Internally input and output matched
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV14800 Datasheet Preview

CGHV14800 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
VDSS
125
VGS -10, +2
TSTG -65, +150
TJ 225
Maximum Forward Gate Current
Maximum DC Current1
Soldering Temperature2
Screw Torque
IGMAX
IDCMAX
TS
τ
132
24
245
40
CW Thermal Resistance, Junction to Case3
RθJC 0.44
Pulsed Thermal Resistance, Junction to Case3
RθJC 0.10
Case Operating Temperature4
TC -40, +100
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV14800F
4 See also, the Power Dissipation De-rating Curve on Page x
Electrical Characteristics
Characteristics
Symbol
Min.
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 80.3
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Output Power
POUT
Drain Efficiency
DE
Power Gain
GP
Pulsed Amplitude Droop
D
Typ.
-3.0
-2.7
123.5
900
68
14.5
-0.3
Output Mismatch Stress
VSWR
5:1
Dynamic Characteristics
Input Capacitance
CGS 326
Output Capacitance
CDS 643
Feedback Capacitance
CGD 3.9
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV14800-AMP. Pulse Width = 3 μS, Duty Cycle = 3%.
Max.
-2.3
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
PDISS = 398 W, 50˚C
PDISS = 664 W, 3 µsec, 3%, 85˚C
PDISS = 664 W, 100 µsec, 10%
Units
Conditions
VDC VDS = 10 V, ID = 83.6 mA
VDC VDS = 50 V, ID = 500 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 83.6 mA
W VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm
% VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm
dB VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm
dB VDD = 50 V, IDQ = 800 mA
Y No damage at all phase angles,
VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm Pulsed
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV14800 Rev 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV14800
Description GaN HEMT
Maker Cree
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CGHV14800 Datasheet PDF






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