CGH60030D
CGH60030D is GaN HEMT Die manufactured by Cree.
30 W, 6.0 GHz, Ga N HEMT Die
Cree’s CGH60030D is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT). Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Ga N HEMTs offer greater power density and wider bandwidths pared to Si and Ga As transistors.
PN: CGH60030D
Features
APPLICATIONS
- 15 d B Typical Small Signal Gain at 4 GHz
- 12 d B Typical Small Signal Gain at 6 GHz
- 30 W Typical PSAT
- 28 V Operation
- High Breakdown Voltage
- High Temperature Operation
- Up to 6 GHz Operation
- High Efficiency
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
- Bare die are shipped in Gel-Pak® containers.
- Non-adhesive tacky membrane immobilizes die during shipment.
Rev 3.1
- April 2012
Subject to change without notice. .cree./wireless...
