900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cree

CGH60030D Datasheet Preview

CGH60030D Datasheet

GaN HEMT Die

No Preview Available !

CGH60030D
30 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to
silicon or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and wider
bandwidths compared to Si and GaAs transistors.
PN: CGH60030D
FEATURES
APPLICATIONS
15 dB Typical Small Signal Gain at 4 GHz
12 dB Typical Small Signal Gain at 6 GHz
30 W Typical PSAT
28 V Operation
High Breakdown Voltage
High Temperature Operation
Up to 6 GHz Operation
High Efficiency
2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Packaging Information
Bare die are shipped in Gel-Pak® containers.
Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH60030D Datasheet Preview

CGH60030D Datasheet

GaN HEMT Die

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage
VDSS
84
Gate-source Voltage
VGS -10, +2
Storage Temperature
TSTG
-65, +150
Operating Junction Temperature
TJ 225
Maximum Forward Gate Current
IGMAX
7.0
Maximum Drain Current1
IDMAX
3.0
Thermal Resistance, Junction to Case (packaged)2
Thermal Resistance, Junction to Case (die only)
Mounting Temperature (30 seconds)
RθJC
RθJC
TS
4.8
3.0
320
Note1 Current limit for long term, reliable operation
Note2 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier.
Units
VDC
VDC
˚C
˚C
mA
A
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
30 seconds
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Drain Current
Drain-Source Breakdown Voltage
On Resistance
Gate Forward Voltage
RF Characteristics
Small Signal Gain
Saturated Power Output1
Drain Efficiency2
Intermodulation Distortion
Symbol
VGS(TH)
VGS(Q)
IDS
VBD
RON
VG-ON
GSS
PSAT
η
IM3
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 PSAT is defined as IG = 0.7 mA.
2 Drain Efficiency = POUT / PDC.
CGS
CDS
CGD
Min.
-3.8
5.8
120
Typ.
-3.0
-2.7
7.0
0.5
1.9
15
30
65
-30
8.2
1.7
0.4
Max.
–2.3
10 : 1
Units
Conditions
V VDS = 10 V, ID = 7.2 mA
VDC VDD = 28 V, IDQ = 200 mA
A VDS = 6.0 V, VGS = 2.0 V
V VGS = -8 V, ID = 7.2 mA
VDS = 0.1 V
V IGS = 7.2 mA
dB
W
%
dBc
Y
pF
pF
pF
VDD = 28 V, IDQ = 200 mA
VDD = 28 V, IDQ = 200 mA
VDD = 28 V, IDQ = 200 mA, PSAT = 30 W
VDD = 28 V, IDQ = 200 mA,
POUT = 30 W PEP
No damage at all phase angles,
VDD = 28 V, IDQ = 200 mA,
POUT = 30 W CW
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2 CGH60030D Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless


Part Number CGH60030D
Description GaN HEMT Die
Maker Cree
PDF Download

CGH60030D Datasheet PDF






Similar Datasheet

1 CGH60030D GaN HEMT Die
Cree





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy