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CGH60015D Datasheet Preview

CGH60015D Datasheet

GaN HEMT Die

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CGH60015D
15 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT). GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift velocity,
and higher thermal conductivity. GaN HEMTs offer greater power density
and wider bandwidths compared to Si and GaAs transistors.
PN: CGH60015D
FEATURES
APPLICATIONS
15 dB Typical Small Signal Gain at 4 GHz
12 dB Typical Small Signal Gain at 6 GHz
15 W Typical PSAT
28 V Operation
High Breakdown Voltage
High Temperature Operation
Up to 6 GHz Operation
High Efficiency
2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Packaging Information
Bare die are shipped in Gel-Pak® containers.
Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH60015D Datasheet Preview

CGH60015D Datasheet

GaN HEMT Die

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Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage
VDSS
Gate-source Voltage
VGS
Storage Temperature
TSTG
Operating Junction Temperature
TJ
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Thermal Resistance, Junction to Case (packaged)2
RθJC
Thermal Resistance, Junction to Case (die only)
RθJC
Mounting Temperature (30 seconds)
TS
Note1 Current limit for long term, reliable operation
84
-10, +2
-65, +150
225
4.0
1.5
8.0
5.1
320
Note2 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier.
Units
VDC
VDC
˚C
˚C
mA
A
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
30 seconds
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Drain Current
Drain-Source Breakdown Voltage
On Resistance
Gate Forward Voltage
RF Characteristics
Small Signal Gain
Saturated Power Output1
Drain Efficiency2
Intermodulation Distortion
Symbol
VGS(TH)
VGS(Q)
IDS
VBD
RON
VG-ON
GSS
PSAT
η
IM3
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1
2
PDSrAaT iins
Edfeffiicnieendcays=IGP=OUT0/.4PDmC A.
VSWR
CGS
CDS
CGD
Min.
-3.8
2.9
120
Typ.
-3.0
-2.7
3.5
1.0
1.9
15
15
65
-30
4.1
0.9
0.2
Max.
–2.3
10 : 1
Units
Conditions
V VDS = 10 V, ID = 3.6 mA
VDC VDD = 28 V, IDQ = 100 mA
A VDS = 6.0 V, VGS = 2.0 V
V VGS = -8 V, ID = 3.6 mA
VDS = 0.1 V
V IGS = 3.6 mA
dB
W
%
dBc
Y
pF
pF
pF
VDD = 28 V, IDQ = 100 mA
VDD = 28 V, IDQ = 100 mA
VDD = 28 V, IDQ = 100 mA, PSAT = 15 W
VDD = 28 V, IDQ = 100 mA,
POUT = 15 W PEP
No damage at all phase angles,
VDD = 28 V, IDQ = 100 mA,
POUT = 15 W CW
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2 CGH60015D Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless


Part Number CGH60015D
Description GaN HEMT Die
Maker Cree
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