• Part: CGH55030P1
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 679.68 KB
Download CGH55030P1 Datasheet PDF
Cree
CGH55030P1
Features - 300 MHz Instantaneous Bandwidth - 30 W Peak Power Capability - 10 d B Small Signal Gain - 4 W PAVE < 2.0 % EVM - 25 % Efficiency at 4 W Average Power - Designed for Wi MAX Fixed Access 802.16-2004 OFDM Applications - Designed for Multi-carrier DOCSIS Applications Rev 4.0 - May 2015 Subject to change without notice. .cree./rf Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature VDSS VGS PDISS TSTG TJ 84 -10, +2 14 -65, +150 Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque IGMAX IDMAX TS τ 7.0 3 245 60 Thermal Resistance, Junction to Case3 RθJC Case Operating Temperature3 TC -40, +150 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at .cree./RF/Document-Library 3 Measured for the CGH55030F1 at PDISS =...