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CGH55030P1 - GaN HEMT

Download the CGH55030P1 datasheet PDF. This datasheet also covers the CGH55030F1 variant, as both devices belong to the same gan hemt family and are provided as variant models within a single manufacturer datasheet.

Description

RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.4pF, +/-0.05pF, 0603

Features

  • 300 MHz Instantaneous Bandwidth.
  • 30 W Peak Power Capability.
  • 10 dB Small Signal Gain.
  • 4 W PAVE < 2.0 % EVM.
  • 25 % Efficiency at 4 W Average Power.
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CGH55030F1-Cree.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616 Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.50 GHz 5.65 GHz Small Signal Gain 9.5 10.0 5.80 GHz 9.
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