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CGH55030P1 Datasheet Preview

CGH55030P1 Datasheet

GaN HEMT

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CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX
and BWA amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
Small Signal Gain
9.5 10.0
5.80 GHz
9.5
Units
dB
EVM at PAVE = 29 dBm
1.1 0.9 0.9 %
EVM at PAVE = 36 dBm
2.2 1.4 1.4 %
Drain Efficiency at PAVE = 4 W
23
24
25 %
Input Return Loss
10.8
22
9.3 dB
Note:
Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 300 MHz Instantaneous Bandwidth
• 30 W Peak Power Capability
10 dB Small Signal Gain
• 4 W PAVE < 2.0 % EVM
• 25 % Efficiency at 4 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/rf
1




Cree

CGH55030P1 Datasheet Preview

CGH55030P1 Datasheet

GaN HEMT

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
VDSS
VGS
PDISS
TSTG
TJ
84
-10, +2
14
-65, +150
225
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
IGMAX
IDMAX
TS
τ
7.0
3
245
60
Thermal Resistance, Junction to Case3
RθJC
4.8
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH55030F1 at PDISS = 14 W
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
30 seconds
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0 –2.3
VDC VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 28 V, ID = 250 mA
Saturated Drain Current
IDS 5.8 7.0
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
GSS 8.5
10.0
VDC VGS = -8 V, ID = 7.2 mA
dB VDD = 28 V, IDQ = 250 mA
Drain Efficiency4
η
19 24
% VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
EVM
VSWR
2.0 2.5
10 : 1
% VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Input Capacitance
CGS 9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH55030-AMP test fixture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efficiency = POUT / PDC.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH55030P1
Description GaN HEMT
Maker Cree
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