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CGH55030F1 - GaN HEMT

Description

RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.4pF, +/-0.05pF, 0603

Features

  • 300 MHz Instantaneous Bandwidth.
  • 30 W Peak Power Capability.
  • 10 dB Small Signal Gain.
  • 4 W PAVE < 2.0 % EVM.
  • 25 % Efficiency at 4 W Average Power.
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616 Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.50 GHz 5.65 GHz Small Signal Gain 9.5 10.0 5.80 GHz 9.
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