Datasheet4U Logo Datasheet4U.com

CGH55030F1 - GaN HEMT

Overview

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications.

The transistor is available in both screw-down, flange and solder-down, pill packages.

Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.

Key Features

  • 300 MHz Instantaneous Bandwidth.
  • 30 W Peak Power Capability.
  • 10 dB Small Signal Gain.
  • 4 W PAVE < 2.0 % EVM.
  • 25 % Efficiency at 4 W Average Power.
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM.