CGH55015P1 hemt equivalent, gan hemt.
* 5.5 - 5.8 GHz Operation
* 15 W Peak Power Capability
* >10.5 dB Small Signal Gain
* 2 W PAVE < 2.0 % EVM
* 25 % Efficiency at 2 W Average Power.
The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external ma.
CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S CAP, 18pF, +/-5%, 0603, ATC 600S CAP, 39pF +/-5%, 0603, ATC 600S CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 CAP, CER, 0.1UF, 50V, +/-10%, X7.
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