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CGH55015P1 Datasheet GaN HEMT

Manufacturer: Cree (now Wolfspeed)

Download the CGH55015P1 datasheet PDF. This datasheet also includes the CGH55015F1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CGH55015F1-Cree.pdf) that lists specifications for multiple related part numbers.

Overview

CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications.

The transistor is available in both screw-down, flange and solder-down, pill packages.

Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.

Key Features

  • 5.5 - 5.8 GHz Operation.
  • 15 W Peak Power Capability.
  • >10.5 dB Small Signal Gain.
  • 2 W PAVE < 2.0 % EVM.
  • 25 % Efficiency at 2 W Average Power.
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo CGH55015P1 GaN HEMT Wolfspeed

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