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CGH55015F1 - GaN HEMT

Description

CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S CAP, 18pF, +/-5%, 0603, ATC 600S CAP, 39pF +/-5%, 0603, ATC 600S CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 CAP, 10UF, 16V, SMT, TANTALUM CAP, 1.0UF ±

Features

  • 5.5 - 5.8 GHz Operation.
  • 15 W Peak Power Capability.
  • >10.5 dB Small Signal Gain.
  • 2 W PAVE < 2.0 % EVM.
  • 25 % Efficiency at 2 W Average Power.
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616 Typical Performance 5.5-5.8GHz (TC = 25˚C) Parameter 5.50 GHz Small Signal Gain 10.7 5.65 GHz 11.0 5.80 GHz 10.7 EVM at PAVE = 23 dBm 1.9 1.8 2.0 EVM at PAVE = 33 dBm 1.5 1.5 1.
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