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Cree

CGH40025 Datasheet Preview

CGH40025 Datasheet

RF Power GaN HEMT

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CGH40025
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities
making the CGH40025 ideal for linear and compressed amplifier circuits. The
transistor is available in a screw-down, flange package and solder-down, pill
packages.
PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6
FEATURES
Up to 6 GHz Operation
15 dB Small Signal Gain at 2.0 GHz
13 dB Small Signal Gain at 4.0 GHz
30 W typical PSAT
• 62 % Efficiency at PSAT
28 V Operation
APPLICATIONS
2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH40025 Datasheet Preview

CGH40025 Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
-65, +150
225
7.0
3
245
60
Thermal Resistance, Junction to Case3
RθJC
4.8
Case Operating Temperature3,4
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www,cree.com/RF/Document-Library
3 Measured for the CGH40025F at PDISS = 28 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current
IDS 5.8
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2 (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain
GSS 12
Power Output3
PSAT
20
Drain Efficiency4
η 55
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH40025-AMP.
3 PSAT is defined as IG = 0.72 mA.
4 Drain Efficiency = POUT / PDC
CGS
CDS
CGD
Typ.
-3.0
-2.7
7.0
13
30
62
9.0
2.6
0.4
Max.
-2.3
10 : 1
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Units
Conditions
VDC VDS = 10 V, ID = 7.2 mA
VDC VDS = 28 V, ID = 250 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 7.2 mA
dB VDD = 28 V, IDQ = 250 mA
W VDD = 28 V, IDQ = 250 mA
% VDD = 28 V, IDQ = 250 mA, PSAT
No damage at all phase angles,
Y VDD = 28 V, IDQ = 250 mA,
POUT = 25 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40025 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH40025
Description RF Power GaN HEMT
Maker Cree
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CGH40025 Datasheet PDF






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