CGH35240F - GaN HEMT

Description

RES, 511 OHM, +/- 1%, 1/16W,0603 RES, 5.1,OHM, +/- 1%, 1/16W,0603 CAP, 10.0pF, +/-5%,250V, 0603, CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 470PF, +/-5%, 100V, 0603, X CAP, 33 UF, 20%, G CASE CAP,33000PF, 0805,100V, X7R CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 10pF, +/- 1%, 250V, 080

Features

3.1 - 3.5 GHz Operation.
240 W Typical Output Power.
11.6 dB Power Gain at PIN = 42.0 dBm.
57 % Typical Power Added Efficiency.
50 Ohm Internally Matched.

Cree

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Datasheet Details

Part number	CGH35240F
Manufacturer	Cree
File Size	1.22 MB
Description	GaN HEMT
Datasheet	CGH35240F Datasheet
Additional preview pages of the CGH35240F datasheet.

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Full PDF Text Transcription

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CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz Output Power 250 240 225 225 3.5 GHz 220 Gain 12.1 11.9 11.6 11.5 11.4 Power Added Efficiency 60 59 57 52 Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.

Published: Apr 19, 2016 |