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CGH35240F Datasheet Preview

CGH35240F Datasheet

GaN HEMT

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CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
Output Power
250 240 225 225
3.5 GHz
220
Gain
12.1
11.9
11.6
11.5
11.4
Power Added Efficiency
60
59
57
52
Note:
Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
48
Units
W
dB
%
Features
• 3.1 - 3.5 GHz Operation
• 240 W Typical Output Power
• 11.6 dB Power Gain at PIN = 42.0 dBm
• 57 % Typical Power Added Efficiency
• 50 Ohm Internally Matched
• <0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH35240F Datasheet Preview

CGH35240F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Pulse Width
Symbol
PW
Rating
1
Duty Cycle
DC 50
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IDMAX
TS
τ
120
-10, +2
345
-65, +150
225
60
24
245
40
Pulsed Thermal Resistance, Junction to Case3
RθJC
0.5
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH35240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%.
Electrical Characteristics (TC = 25˚C)
Units
ms
%
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3 (TC = 25˚C, F0 = 3.1-3.5 GHz unless otherwise noted)
Output Power1 at 3.1 GHz
POUT
210
Output Power2 at 3.3 GHz
POUT
200
Output Power3 at 3.5 GHz
POUT
180
Power Added Efficiency1 at 3.1 GHz
PAE 48
Power Added Efficiency2 at 3.3 GHz
PAE 48
Power Added Efficiency3 at 3.5 GHz
PAE 40
Power Gain1 at 3.1 GHz
GP 11.0
Power Gain2 at 3.3 GHz
GP 10.8
Power Gain3 at 3.5 GHz
GP 10.5
Small Signal Gain
S21 11.4
-3.0
-2.7
56.0
250
225
220
60
57
48
12.0
11.5
11.5
14
Input Return Loss
S11
-9
Output Return Loss
S22
-10
Pulsed Amplitude Droop
D 0.1
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH35240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Max.
-2.3
-4.5
-4.5
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA
VDC VDS = 28 V, ID = 1.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 57.6 mA
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH35240F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH35240F
Description GaN HEMT
Maker Cree
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