CGH35240F hemt equivalent, gan hemt.
* 3.1 - 3.5 GHz Operation
* 240 W Typical Output Power
* 11.6 dB Power Gain at PIN = 42.0 dBm
* 57 % Typical Power Added Efficiency
* 50 Ohm Inte.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Ove.
RES, 511 OHM, +/- 1%, 1/16W,0603 RES, 5.1,OHM, +/- 1%, 1/16W,0603 CAP, 10.0pF, +/-5%,250V, 0603, CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 470PF, +/-5%, 100V, 0603, X CAP, 33 UF, 20%, G CASE CAP,33000PF, 0805,100V, X7R CAP, 1.0UF, 100V, 10%, X7R, 1210 .
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