CGH27060F Datasheet - Cree

CGH27060F GaN HEMT

RES, 1/16W, 0603, 1%, 22 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 8.2pF, +/-5%, 100B CAP, 0.9pF, +/-0.05pF, 0603 CAP, 2.2pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 82pF, +/-5%, 0603 CAP,330.

PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.3-2.6GHz Parameter Small Sig.

CGH27060F Features

* 2007 Rev 1.0

* May 2.3 - 2.9 GHz Operation >13 dB Small Signal Gain 2.0 % EVM at 8 W POUT 23 % Efficiency at 8 W POUT 2.7˚C/W Typical thermal resistance under 8.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA

CGH27060F_Cree.pdf