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CGH27060F Datasheet Preview

CGH27060F Datasheet

GaN HEMT

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PRELIMINARY
CGH27060F
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and
BWA amplifier applications. The transistor is supplied in a ceramic/metal
www.DataSheeftl4aUn.cgoempackage.
PackagPeNT:yCpGe:H2474006109F3
Typical Performance Over 2.3-2.6GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
Small Signal Gain
13.5
13.3
13.0
12.9
Units
dB
EVM @ 39 dBm
2.1 1.9 1.9 2.2
%
Drain Efficiency @ 39 dBm
24.2
23.8
22.5
22.3
%
Input Return Loss
9.8 16.0 7.7
5.9
dB
Note:
Measured in the CGH27060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
2.3 - 2.9 GHz Operation
>13 dB Small Signal Gain
2.0 % EVM at 8 W POUT
23 % Efficiency at 8 W POUT
2.7˚C/W Typical thermal resistance under 8.0 W PAVE OFDM
WiMAX Fixed Access 802.16-2004 OFDM
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless





Cree

CGH27060F Datasheet Preview

CGH27060F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
TS
RθJC
Note:
www.Data1ShMeeeat4sUu.croemd for the CGH27060F at 8 W PDISS
Electrical Characteristics (TC = 25˚C)
Rating
84
-10, +2
-55, +150
175
245
2.7
Units
Volts
Volts
˚C
˚C
˚C
˚C/W
Characteristics
DC Characteristics4
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.6
-2.5
VDC
VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage
VGS(Q)
-2.6
VDC
VDS = 28 V, ID = 240 mA
Saturated Drain Current
IDS 9.6 10.4 -
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR
84 100
VDC
VGS = -8 V, ID = 14.4 mA
Case Operating Temperature
TC -10
-
+105
˚C Under 8 W PAVE
Screw Torque
T
-
-
80
in-oz
Reference 440193 Package Revision 1
RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS 13.0
dB VDD = 28 V, IDQ = 240 mA
Drain Efficiency1
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM1
EVM2
VSWR
22.5
2.5
2.0
TBD
% VDD = 28 V, IDQ = 240 mA, PAVE = 8 W
%
VPADVDE
=
=
28
24
Vd,BImDQ
=
240
mA,
VDD = 28 V, IDQ = 240 mA, PAVE = 8 W
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 240 mA
Input Capacitance
CGS 19.3
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 4.6
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 1.7
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Drain Efficiency = POUT / PDC
2 Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59,
Coding Type RS-CC, Coding Rate Type 2/3.
3 Measured in the CGH27060F-TB test fixture.
4 Measured on wafer prior to packaging.
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
 CGH27060F Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH27060F
Description GaN HEMT
Maker Cree
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CGH27060F Datasheet PDF






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