CGH27060F - GaN HEMT

Cree

CGH27060F Description

PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEM.
RES, 1/16W, 0603, 1%, 22 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

CGH27060F Features

* 2007 Rev 1.0
* May 2.3 - 2.9 GHz Operation >13 dB Small Signal Gain 2.0 % EVM at 8 W POUT 23 % Efficiency at 8 W POUT 2.7˚C/W Typical thermal resistance under 8.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA

CGH27060F Applications

* The transistor is supplied in a ceramic/metal flange package. www. DataSheet4U. com Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.3-2.6GHz Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.3 GHz 13.5 2.1 24.2 9.8 (TC = 25˚C) of Demonstration

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CGH27060F Datasheet Preview — Preview of CGH27060F PDF

Datasheet Details

Part number: CGH27060F
Manufacturer: Cree
File Size: 934.34 KB
Datasheet: CGH27060F_Cree.pdf
Description: GaN HEMT

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