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CGH27060F - GaN HEMT

Description

RES, 1/16W, 0603, 1%, 22 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 8.2pF, +/-5%, 100B CAP, 0.9pF, +/-0.05pF, 0603 CAP, 2.2pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 82pF, +/-5%, 0603 CAP,330

Features

  • 2007 Rev 1.0.
  • May 2.3 - 2.9 GHz Operation >13 dB Small Signal Gain 2.0 % EVM at 8 W POUT 23 % Efficiency at 8 W POUT 2.7˚C/W Typical thermal resistance under 8.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA.
  • Subject to change without notice. www. cree. com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Sourc.

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Datasheet Details

Part number CGH27060F
Manufacturer Cree
File Size 934.34 KB
Description GaN HEMT
Datasheet download datasheet CGH27060F Datasheet
Additional preview pages of the CGH27060F datasheet.

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PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.3-2.6GHz Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.3 GHz 13.5 2.1 24.2 9.8 (TC = 25˚C) of Demonstration Amplifier 2.5 GHz 13.0 1.9 22.5 7.7 2.6 GHz 12.9 2.2 22.3 5.9 Units dB % % dB 2.4 GHz 13.3 1.9 23.8 16.0 Note: Measured in the CGH27060F-TB amplifier circuit, under 802.
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