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CGH27030F - GaN HEMT

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Description

RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 1.6pF, +/-0.1pF, 0603 CAP, 1.8pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP, 3.0pF, +/

Features

  • 2007 Rev 1.0.
  • May 2.3 - 2.9 GHz Operation >13.5 dB Small Signal Gain 26 % Drain Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA.
  • Subject to change without notice. www. cree. com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temper.

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Datasheet Details

Part number CGH27030F
Manufacturer Cree
File Size 964.65 KB
Description GaN HEMT
Datasheet download datasheet CGH27030F Datasheet
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PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH2703 0F Typical Performance Over 2.3-2.7GHz Parameter Small Signal Gain EVM @ 21 dBm EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 2.3 GHz 14.1 2.3 1.7 26.0 7.9 13.8 2.1 1.7 26.2 7.2 (TC = 25˚C) of Demonstration Amplifier 2.6 GHz 13.2 1.7 1.8 25.8 6.4 2.7 GHz 13.0 1.9 2.0 25.7 7.2 Units dB % % % dB 2.4 GHz 2.5 GHz 13.5 1.7 1.8 26.0 6.
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