CGH27015F
CGH27015F is GaN HEMT manufactured by Cree.
PRELIMINARY
15 W, 2300-2900 MHz, 28V, Ga N HEMT for Wi MAX
Cree’s CGH27015 is a gallium nitride (Ga N) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz Wi MAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. ..
Package Type : 440166 PN: CGH2701 5F
Typical Performance 2.4-2.7 GHz
Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0
(TC = 25˚C)
2.5 GHz 14.5 34.0 24.0 6.0 6.0 2.6 GHz 14.5 34.0 24.0 5.0 7.0 2.7 GHz 14.5 34.0 23.0 5.0 7.0 Units d B d Bm % d B d B
Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
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- 2007 Rev 1.7
- May
- 2.9 GHz Operation >14.5 d B Small Signal Gain >2.0 W POUT at 2.0 % EVM 25 % Efficiency at 2.5 % EVM Wi MAX Fixed Access 802.16-2004 OFDM Wi MAX Mobile Access 802.16e OFDMA
- Subject to change without notice. .cree./wireless...
