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CGH27015F Datasheet Preview

CGH27015F Datasheet

GaN HEMT

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PRELIMINARY
CGH27015F
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor
designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX
and BWA amplifier applications. The transistor is available in ceramic,
www.DataSheemt4Uet.caolmflange package.
PackagPeNT:yCpGe:H2474001156F6
Typical Performance 2.4-2.7 GHz (TC = 25˚C)
Parameter
2.4 GHz
2.5 GHz
Small Signal Gain
14.5
14.5
2.6 GHz
14.5
2.7 GHz
14.5
Units
dB
POUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
34.0
23.0
34.0
24.0
34.0
24.0
34.0
23.0
dBm
%
Input Return Loss
7.0 6.0 5.0 5.0 dB
Output Return Loss
5.0 6.0 7.0 7.0 dB
Note:
Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
2.3 - 2.9 GHz Operation
>14.5 dB Small Signal Gain
>2.0 W POUT at 2.0 % EVM
25 % Efficiency at 2.5 % EVM
WiMAX Fixed Access 802.16-2004 OFDM
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless





Cree

CGH27015F Datasheet Preview

CGH27015F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
TS
RθJC
Note:
www.Data1ShMeeeat4sUu.croemd for the CGH27015F at PDISS = 14W.
Electrical Characteristics (TC = 25˚C)
Rating
84
-10, +2
-55, +150
175
245
5.0
Units
Volts
Volts
˚C
˚C
˚C
˚C/W
Characteristics
DC Characteristics4
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.0
-2.5
-1.8
VDC
VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q) -2.45
VDC
VDS = 28 V, ID = 60 mA
Saturated Drain Current
IDS 2.4 2.7
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
84 100
VDC
VGS = -8 V, ID = 3.6 mA
Case Operating Temperature
TC
-10
+105
˚C
Screw Torque
T
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS 13 14.5
-
dB VDD = 28 V, IDQ = 60 mA
Drain Efficiency1
η 20 21 – % VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
Back-Off Error Vector Magnitude
EVM1
2.5
% VDD = 28 V, IDQ = 60 mA, PAVE = 18 dBm
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
EVM2
VSWR
-
2.0
10:1
-
-
% VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
No damage at all phase angles,
Y VDD = 28 V, IDQ = 60 mA,
PAVE = 2.0 W OFDM PAVE
Input Capacitance
CGS 5.00
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 1.32
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.43
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Drain Efficiency = POUT / PDC
2 Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol
Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
3 Measured in the CGH27015F-TB test fixture.
4 Measured on wafer prior to packaging.
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH27015F Rev 1.7 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH27015F
Description GaN HEMT
Maker Cree
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CGH27015F Datasheet PDF






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