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CGH27015F - GaN HEMT

General Description

RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,22.6 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 15pF, +/-5%, 0603 CAP, 1.2pF, +/-0.1pF, 0603 CAP, 2.0pF, +/-0.1pF, 0603 CAP, 2.4pF,+

Key Features

  • 2007 Rev 1.7.
  • May 2.3 - 2.9 GHz Operation >14.5 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 25 % Efficiency at 2.5 % EVM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA.
  • Subject to change without notice. www. cree. com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH2701 5F Typical Performance 2.4-2.7 GHz Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0 (TC = 25˚C) 2.5 GHz 14.5 34.0 24.0 6.0 6.0 2.6 GHz 14.5 34.0 24.0 5.0 7.0 2.7 GHz 14.5 34.0 23.0 5.0 7.