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CGD15FB45P1 Datasheet Preview

CGD15FB45P1 Datasheet

Six Channel SiC MOSFET Driver

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Six Channel SiC MOSFET Driver
Gate Driver for 1200V SiC MOSFET Power Module
Features
6 output channels
Isolated power supply
Direct mount low inductance design
Short circuit protection
Over temperature protection
Under voltage protection
For use with Cree Module
45mm, six-pack CCS020M12CM2
45mm, six-pack CCS050M12CM2
Applications
Driver for SiC MOSFET modules in two-level,
three-phase inverter applications
DC Bus voltage up to 1000VDC
Part Number
CGD15FB45P1
Package
PCBA
Marking
CGD15FB45P1
Absolute Maximum Ratings
Symbol
Parameter
Vs Power Supply Voltage
ViH Input signal voltage HIGH
ViL Input signal voltage LOW
IO.pk
PO_AVG
FMax
VDS
Visol
dv/dt
W
Output peak current
Ouput power per gate
Max. Switching frequency
Max. Drain to source voltage
Input to output isolation
voltage
Rate of change of output to
input voltage
Weight
MTBF Mean time between failure
Top Operating temperature
Tstg Storage temperature
Value
16
5
0
±9 (±2)
1.2
250
1200
±1200
50,000
223
1.5
-35 to 85
-40 to 85
Unit
Test Conditions
V Vs ramp rate >50V/sec
V
V
A Rg limited
W
kHz Vg=+20/-5, Rg=10Ω
V
V
V/μs
g
106h
ºC
ºC
Note
1 CGD15FB45P1 Rev - , 10/2015




Cree

CGD15FB45P1 Datasheet Preview

CGD15FB45P1 Datasheet

Six Channel SiC MOSFET Driver

No Preview Available !

Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Unit
Test Conditions
Notes
VS Supply voltage
14 15.0 16 V
Vi Input signal voltage on/off
5/0 V
Supply current (no load)
230
25C
ISO Supply current (max.)
Supply current (max.)
460 mA f=100khz, 25C
780 f=250khz, 25C
ViT+
Input threshold voltage
HIGH
3.5
V
ViT-
Input threshold voltage
LOW
1.5 V
Rin Input resistance
Cio Coupling capacitance
Tdon Turn on propogation delay
48 k
30 pf
Time from when input pin
300 nS goes high until driver output Fig. 3, 4
goes high
Tdoff Turn off propogation delay
Time from when input pin
300 nS goes low until driver output Fig. 3, 4
goes low
TRout
Output voltage rise time
VOUT time from 10% to 90%
65
nS with RG = 0ohms, CLOAD =
Fig. 5
40,000pf
TFout
Output voltage fall time
VOUT time from 90% to 10%
50 nS with RG = 0ohms, CLOAD =
40,000pf
RGON
Turn-on gate resistor
10
RGOFF
Turn-off gate resistor
10
VGATEON Gate voltage at turn-on
+20 V
VGATEOFF Gate voltage at turn-off
-5 V
TSC
Short Circuit Response
Time
2.34
Total time from when short
μS circuit current begins flowing
until it is interrupted
VDS,TRIP VDS monitoring threshold
4.7
V
VDS value that causes the
driver to trip on overcurrent
Time from when desat
TFLT_DLY Fault Delay Time
425 nS pin=9V until the gate output
begins turning off
TFLT_SIG
Transmission delay of fault
state
Time delay from desat
2.25 μS pin=9V until fault status pin
is pulled low
Terr
Pulse width for resetting
fault
800
nS
Time reset pin must be held
low to reset driver
Test voltage (60Hz/1min),
Primary to secondary
4000
V
Test voltage (60Hz/1min),
Secondary to secondary
4000
V
Creepage distance, Primary
to secondary
9.0
mm
Fig. 5
Creepage distance,
Secondary to secondary
7.0 mm
Clearance distance,
Primary to secondary
Clearance distance,
Secondary to secondary
6.0 mm
7.0 mm
2 CGD15FB45P1 Rev - , 10/2015


Part Number CGD15FB45P1
Description Six Channel SiC MOSFET Driver
Maker Cree
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Cree





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