Click to expand full text
C3M0280090J
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source
Package
TAB Drain
Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • Lighting • High voltage DC/DC converters • Telecom Power Supplies • Induction Heating
1 2 34 5 6 7 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
C3M0280090J Datasheet
