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C3M0280090J Datasheet Preview

C3M0280090J Datasheet

Silicon Carbide Power MOSFET

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C3M0280090J
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
New C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
New low impedance package with driver source
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Wide creepage (~7mm) between drain and source
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
Renewable energy
Lighting
High voltage DC/DC converters
Telecom Power Supplies
Induction Heating
Package
VDS
ID @ 25˚C
RDS(on)
900 V
11 A
280 m
Part Number
C3M0280090J
Package
TO-263-7
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
11
7
ID(pulse) Pulsed Drain Current
22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
50
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0280090J Rev. A 01-2018




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C3M0280090J Datasheet Preview

C3M0280090J Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
900
1.8 2.1
1.6
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
1
10
280
385
gfs Transconductance
3.6
3.1
Ciss Input Capacitance
150
Coss Output Capacitance
20
Crss Reverse Transfer Capacitance
2
Eoss Coss Stored Energy
4.5
Max.
3.5
100
250
360
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 1.2 mA
VDS = VGS, ID = 1.2 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 7.5 A
VGS = 15 V, ID = 7.5 A, TJ = 150ºC
VDS= 15 V, IDS= 7.5 A
VDS= 15 V, IDS= 7.5 A, TJ = 150ºC
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
μJ
EON
EOFF
td(on)
tr
td(off)
tf
RG(int)
Qgs
Qgd
Qg
Turn-On Switching Energy
Turn Off Switching Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
19
3.7
10.5
6.5
11
4
26
2.8
3.4
9.5
μJ
VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A,
RG(ext) = 2.5 , L= 220 μH, TJ = 150ºC
VDD = 400 V, VGS = -4 V/15 V
ns
ID = 7.5 A, RG(ext) = 2.5 ,
Timing relative to VDS
Inductive load
f = 1 MHz, VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
nC ID = 7.5 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VSD Diode Forward Voltage
4.8
4.4
IS Continuous Diode Forward Current
9
IS, pulse
Diode pulse Current
22
trr Reverse Recover time
20
Qrr Reverse Recovery Charge
47
Irrm Peak Reverse Recovery Current
3.4
Note (2): When using SiC Body Diode the maximum recommended VGS = -4V
Thermal Characteristics
V VGS = -4 V, ISD = 4 A
V VGS = -4 V, ISD = 4 A, TJ = 150 °C
A VGS = -4 V
A VGS = -4 V, pulse width tP limited by Tjmax
ns
nC
VGS = -4 V, ISD = 7.5 A, VR = 400 V
dif/dt = 600 A/µs, TJ = 150 °C
A
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26,
29
Note(3)
Fig. 27,
29
Note(3)
Fig. 12
Note
Fig. 8, 9,
10
Note (2)
Note (2)
Note (2)
Symbol
RJC
RJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
2.5
40
Unit
°C/W
Test Conditions
Note
Fig. 21
2 C3M0280090J Rev. A 01-2018


Part Number C3M0280090J
Description Silicon Carbide Power MOSFET
Maker Cree
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