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C3M0280090D Datasheet Preview

C3M0280090D Datasheet

Silicon Carbide Power MOSFET

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VDS 900 V
C3M0280090D
ID @ 25˚C 11.5 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 280 m
N-Channel Enhancement Mode
Features
Package
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
Renewable energy
Lighting
High voltage DC/DC converters
Telecom Power Supplies
Induction Heating
Part Number
C3M0280090D
Package
TO-247-3
Marking
C3M0280090
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
900
-8/+19
-4/+15
11.5
7.5
ID(pulse) Pulsed Drain Current
22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
54
-55 to
+150
260
1
8.8
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20
1 C3M0280090D Rev. A , 03-2017




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C3M0280090D Datasheet Preview

C3M0280090D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Source Leakage Current
RDS(on) Drain-Source On-State Resistance
gfs Transconductance
Min.
900
1.8
Typ.
2.1
1.6
1
10
280
385
3.6
3.1
Ciss Input Capacitance
150
Coss Output Capacitance
20
Crss Reverse Transfer Capacitance
2
Eoss Coss Stored Energy
4.5
EON Turn-On Switching Energy (Body Diode FWD)
57
EOFF Turn Off Switching Energy (Body Diode FWD)
td(on) Turn-On Delay Time
6
26
tr Rise Time
10
td(off)
Turn-Off Delay Time
17.5
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
7.5
26
2.8
3.4
9.5
Max.
3.5
100
250
360
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 1.2 mA
VDS = VGS, ID = 1.2 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 7.5 A
VGS = 15 V, ID = 7.5 A, TJ = 150ºC
VDS= 15 V, IDS= 7.5 A
VDS= 15 V, IDS= 7.5 A, TJ = 150ºC
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
μJ
μJ VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A,
RG(ext) = 2.5Ω, L= 220 μH, TJ = 150ºC
VDD = 400 V, VGS = -4 V/15 V
ns
ID = 7.5 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
nC ID = 7.5 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
VSD Diode Forward Voltage
IS
IS, pulse
trr
Qrr
Irrm
Continuous Diode Forward Current
Diode pulse Current
Reverse Recover time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.8
4.4
20
47
3.4
Max.
16.5
22
Unit
V
V
A
A
ns
nC
A
Test Conditions
VGS = -4 V, ISD = 4 A
VGS = -4 V, ISD = 4 A, TJ = 150 °C
VGS = -4 V
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 4 A, VR = 400 V
dif/dt = 600 A/µs, TJ = 150 °C
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26,
29
Note 3
Fig. 27,
29
Note 3
Fig. 12
Note
Fig. 8,
9, 10
Note 1
Note 1
Note 1
Thermal Characteristics
Symbol Parameter
Max.
Unit
Test Conditions
RθJC Thermal Resistance from Junction to Case
RθJA Thermal Resistance From Junction to Ambient
2.3
°C/W
40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
Note
Fig. 21
2 C3M0280090D Rev. A , 03-2017


Part Number C3M0280090D
Description Silicon Carbide Power MOSFET
Maker Cree
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